BC489ARLRE PDF预览

BC489ARLRE

更新时间: 2025-07-18 20:45:47
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
5页 190K
描述
500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN

BC489ARLRE 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.41最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):225极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

BC489ARLRE 数据手册

 浏览型号BC489ARLRE的Datasheet PDF文件第2页浏览型号BC489ARLRE的Datasheet PDF文件第3页浏览型号BC489ARLRE的Datasheet PDF文件第4页浏览型号BC489ARLRE的Datasheet PDF文件第5页 
ON Semiconductort  
High Current Transistors  
NPN Silicon  
BC489, A, B  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CBO  
V
EBO  
80  
5.0  
0.5  
Collector Current — Continuous  
I
C
1
2
3
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
C
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
COLLECTOR  
1
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
q
JA  
JC  
2
R
83.3  
q
BASE  
3
EMITTER  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
Collector–Emitter Breakdown Voltage  
V
80  
80  
5.0  
Vdc  
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
(I = 10 mAdc, I = 0)  
C
B
Collector–Base Breakdown Voltage  
(I = 100 mAdc, I = 0)  
V
V
C
E
Emitter–Base Breakdown Voltage  
(I = 10 mAdc, I = 0)  
Vdc  
E
C
Collector Cutoff Current  
(V = 60 Vdc, I = 0)  
I
100  
nAdc  
CBO  
CB  
E
ON CHARACTERISTICS*  
DC Current Gain  
h
FE  
(I = 10 mAdc, V = 2.0 Vdc)  
40  
60  
100  
160  
15  
160  
260  
C
CE  
(I = 100 mAdc, V = 2.0 Vdc)  
BC489  
BC489A  
BC489B  
400  
250  
400  
C
CE  
(I = 1.0 Adc, V = 5.0 Vdc)*  
C
CE  
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.  
Semiconductor Components Industries, LLC, 2001  
227  
Publication Order Number:  
March, 2001 – Rev. 1  
BC489/D  

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