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BC489G PDF预览

BC489G

更新时间: 2024-11-13 12:53:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 86K
描述
High Current Transistors NPN Silicon These are Pb−Free Devices

BC489G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:LEAD FREE, CASE 29-11, TO-226, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.26
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

BC489G 数据手册

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BC489, BC489A  
High Current Transistors  
NPN Silicon  
Features  
http://onsemi.com  
These are Pb−Free Devices*  
COLLECTOR  
1
MAXIMUM RATINGS  
2
BASE  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
CollectorEmitter Voltage  
Collector Current − Continuous  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CBO  
V
EBO  
3
80  
EMITTER  
5.0  
0.5  
I
C
Total Power Dissipation @ T = 25°C  
P
625  
5.0  
mW  
mW/°C  
A
D
TO−92  
CASE 29  
STYLE 17  
Derate above T = 25°C  
A
Total Power Dissipation @ T = 25°C  
P
D
1.5  
12  
W
mW/°C  
A
Derate above T = 25°C  
A
1
1
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
2
2
J
stg  
3
3
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
JC  
MARKING DIAGRAM  
R
83.3  
q
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
BC  
489x  
AYWW G  
G
489x = 489A  
A
= Assembly Location  
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
BC489G  
Package  
Shipping  
TO−92  
(Pb−Free)  
5000 Units / Bulk  
2000 / Tape & Reel  
5000 Units / Bulk  
BC489RL1G  
BC489AG  
TO−92  
(Pb−Free)  
TO−92  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 3  
BC489/D  

BC489G 替代型号

型号 品牌 替代类型 描述 数据表
BC489 ONSEMI

完全替代

High Current Transistors(NPN Silicon)
BC489AG ONSEMI

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High Current Transistors NPN Silicon These ar
BC487G ONSEMI

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