Datasheet > BC32840

BC32840

更新时间： 2024-11-24 21:54:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	51K
描述
PNP EPITAXIAL SILICON TRANSISTOR

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中文翻译

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数据手册

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BC32840 数据手册

BC327/328

Switching and Amplifier Applications

•

Suitable for AF-Driver stages and low power output stages

Complement to BC337/BC338

TO-92

1. Collector 2. Base 3. Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

: BC327

: BC328

Collector-Emitter Voltage

CES

-50

-30

CEO

EBO

: BC327

: BC328

-45

-25

Emitter-Base Voltage

-5

-800

Collector Current (DC)

Collector Power Dissipation

Junction Temperature

Storage Temperature

°C

625

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Emitter Breakdown Voltage I = -10mA, I =0

CEO

CES

EBO

: BC327

: BC328

-45

-25

Collector-Emitter Breakdown Voltage I = -0.1mA, V =0

: BC327

: BC328

-50

-30

Emitter-Base Breakdown Voltage

I = -10µA, I =0

-5

Collector Cut-off Current

: BC327

CES

= -45V, V =0

= -25V, V =0

-2

-100

: BC328

DC Current Gain

= -1V, I = -100mA

100

630

FE1

FE2

= -1V, I = -300mA

(sat) Collector-Emitter Saturation Voltage

(on) Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

I = -500mA, I = -50mA

-0.7

-1.2

= -1V, I = -300mA

= -5V, I = -10mA, f=20MHz

100

MHz

= -10V, I =0, f=1MHz

Classification

100 ~ 250

60-

160 ~ 400

100-

250 ~ 630

170-

FE1

FE2

Rev. B1, August 2002

12 3 4

中文翻译

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