BC327, BC327−16,
BC327−25, BC327−40
Amplifier Transistors
PNP Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available*
COLLECTOR
1
2
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V
−45
Vdc
CEO
3
EMITTER
Collector−Base Voltage
V
V
−50
−5.0
−800
Vdc
Vdc
CES
Collector−Emitter Voltage
Collector Current − Continuous
EBO
I
mAdc
C
Total Power Dissipation @ T = 25°C
P
625
5.0
mW
mW/°C
A
D
Derate above T = 25°C
A
Total Power Dissipation @ T = 25°C
P
1.5
12
W
mW/°C
A
D
Derate above T = 25°C
A
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
TO−92
CASE 29
STYLE 17
1
2
THERMAL CHARACTERISTICS
Characteristic
3
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
R
200
°C/W
q
JA
JC
Thermal Resistance, Junction−to−Case
R
q
83.3
°C/W
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
BC
xx
AYWW G
G
BCxx = Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 3
BC327/D