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BC172

更新时间: 2024-12-01 03:21:27
品牌 Logo 应用领域
CDIL 晶体晶体管局域网
页数 文件大小 规格书
4页 221K
描述
NPN SILICON PLANAR TRANSISTORS

BC172 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TO-92包装说明:PLASTIC, TO-92, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.46最大集电极电流 (IC):0.1 A
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

BC172 数据手册

 浏览型号BC172的Datasheet PDF文件第2页浏览型号BC172的Datasheet PDF文件第3页浏览型号BC172的Datasheet PDF文件第4页 
IS/ISO 9002  
Lic# QSC/L- 000019.2  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
NPN SILICON PLANAR TRANSISTORS  
BC171 , A, B  
BC172, A, B, C  
BC174, A, B  
TO-92  
Plastic Package  
E
B
C
Amplifier Transistors  
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL  
BC174 BC171 BC172  
UNIT  
VCEO  
VCBO  
VEBO  
IC  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
Collector Current Continuous  
Total Device Dissipation @ Ta=25ºC  
Derate Above 25ºC  
Total Device Dissipation @ Tc=25ºC  
Derate Above 25ºC  
65  
80  
45  
50  
6
100  
350  
2.8  
1.0  
8.0  
25  
30  
V
V
V
mA  
PD  
mW  
mW/ºC  
W
PD  
mW/ºC  
Operating And Storage Junction  
Temperature Range  
Tj, Tstg  
-55 to +150  
ºC  
THERMAL RESISTANCE  
Junction to ambient  
Junction to case  
Rth(j-a)  
Rth(j-c)  
357  
125  
ºC/W  
ºC/W  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
VALUE  
TYP  
DESCRIPTION  
SYMBOL TEST CONDITION  
UNIT  
MIN  
MAX  
BVCEO IC=2mA,IB=0  
Collector Emitter Breakdown  
Voltage  
BC174  
BC171  
BC172  
65  
45  
25  
V
V
V
BVEBO  
Emitter Base Breakdown  
Voltage  
IE=100mA, IC=0  
ALL  
6
V
ICES  
Collector Cut off Current  
VCE=70V, VBE = 0  
VCE=50V, VBE = 0  
VCE=35V, VBE = 0  
BC174  
BC171  
BC172  
15  
15  
15  
nA  
nA  
nA  
VCE=30V, VBE = 0,  
Ta= 125ºC  
4
mA  
Continental Device India Limited  
Data Sheet  
Page 1 of 4  

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