Datasheet > BC16116

BC16116

更新时间： 2024-11-29 22:39:27

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体放大器晶体管
页数	文件大小	规格书
8页	203K
描述
Amplifier Transistors PNP Silicon

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BC16116 数据手册

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by BC161–16/D

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

–60

Unit

CASE 79–04, STYLE 1

TO–39 (TO–205AD)

CEO

CBO

EBO

Vdc

Adc

–60

–5.0

–1.0

Collector Current — Continuous

Total Device Dissipation @ T = 25°C

Derate above 25°C

0.8

4.6

Watts

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

3.7

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–65 to +200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

219

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector Cutoff Current

CES

(I = 0, V

= –60 Vdc)

—

–100

nAdc

µAdc

CES

(I = 0, V

= –60 Vdc, T

= 150°C)

Amb

Collector–Emitter Breakdown Voltage

(I = –100 µAdc, I = 0)

–60

–5.0

—

Vdc

(BR)CES

(BR)CEO

(BR)EBO

(1)

Collector–Emitter Breakdown Voltage

(I = –10 mAdc, I = 0)

Emitter–Base Breakdown Voltage

(I = –100 Adc, I = 0)

1. Pulsed: Pulse Duration = 300 s, Duty Cycle = 2.0%.

(Replaces BC160–16/D)

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1997

12 3 4 5 6 7 8

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