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BBS

更新时间： 2024-11-21 08:49:15

品牌	Logo	应用领域
科信 - KEXIN		二极管开关射频开关
页数	文件大小	规格书
1页	37K
描述
Silicon RF Switching Diode

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中文翻译

获取价格

数据手册

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BBS 数据手册

SMD Type

Diodes

Silicon RF Switching Diode

BAR81W

SOT-343

Unit: mm

Features

Design for use in shunt configuration

High shunt signal isolation

Low shunt insertion loss

Absolute Maximum Ratings Ta = 25

Parameter

Diode reverse voltage

Symbol

V^R

Value

Unit

Forward current

I^F

100

150

Ptot

Total power dissipation, T^S= 103

Junction temperature

T^j

Operating temperature range

Storage temperature range

Top

-55 to + 125

-55 to + 150

200

Tstg

Rth JA

R^{th JS}

K/W

Junction - ambient

Junction - soldering point

Note

120

1.Package mounted on alumina 15mm 16.7mm 0.7mm

Electrical Characteristics Ta = 25

Parameter

Reverse current

Symbol

I^R

Test Condition

VR = 20 V

Min

Typ

Max

Unit

Forward voltage

V^F

IF = 100 mA

0.93

0.6

V^R= 1 V, f = 1 MHz

V^R= 3 V, f = 1 MHz

Diode capacitance

C^T

0.57

0.7

Forward resistance

Series inductance

I^F= 5 mA, f = 100 MHz

trr

0.15

Marking

BBs

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中文翻译

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