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BAV21TR

更新时间： 2024-11-21 11:12:35
品牌 Logo 应用领域
安森美 - ONSEMI 高压二极管
页数 文件大小 规格书
5页 147K
描述
高压通用型二极管

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BAV21TR 数据手册

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DATA SHEET  
www.onsemi.com  
Small Signal Diode  
BAV19  
ABSOLUTE MAXIMUM RATINGS  
A
AXIAL LEAD  
(DO−35)  
CASE 017AG  
(T = 25°C unless otherwise noted) (Notes 1, 2, 3)  
Symbol  
Parameter  
Value  
120  
Units  
V
V
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
RRM  
(Color Band Denotes Cathode)  
I
200  
mA  
A
F(AV)  
MARKING DIAGRAM  
I
Non−repetitive Peak Forward Surge  
Current  
FSM  
Pulse Width = 1.0 s  
Pulse Width = 1.0 ms  
1.0  
4.0  
T
Storage Temperature Range  
−65 to +200  
°C  
°C  
STG  
T
J
Operating Junction Temperature  
175  
BA  
V1  
9
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. These ratings are limiting values above which the serviceability of the diode  
may be impaired.  
CATHODE  
BAND  
2. These ratings are based on a maximum junction temperature of 200°C.  
3. These are steady limits. The factory should be consulted on applications  
involving pulsed or low duty cycle operations.  
THERMAL CHARACTERISTICS  
BAV19  
= Specific Device Code  
Symbol  
Parameter  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
Value  
500  
Units  
mW  
ORDERING INFORMATION  
P
D
R
300  
°C/W  
†
q
JA  
Device  
BAV19TR  
Package  
Shipping  
DO−35  
(Pb−Free)  
10,000 Units /  
Tape & Reel  
ELECTRICAL CHARACTERISTICS  
(T = 25°C unless otherwise noted)  
A
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Symbol Parameter  
Test Conditions  
= 100 mA  
R
Min  
Max  
Units  
V
R
Breakdown  
Voltage  
I
120  
−
V
V
F
Forward  
Voltage  
I = 100 mA  
F
−
−
1.0  
1.25  
V
F
I = 200 mA  
I
R
Reverse  
Current  
V
R
V
R
= 100 V  
−
−
100  
100  
nA  
mA  
= 100 V, T = 150°C  
A
C
Total  
V
= 0, f = 1.0 MHz  
−
5.0  
pF  
ns  
T
R
Capacitance  
t
rr  
Reverse  
Recovery  
Time  
I = I = 30 mA,  
−
50  
F
RR  
R
I
= 3.0 mA,  
R = 100 W  
L
Product parametric performance is indicated in the Electrical Characteristics for  
the listed test conditions, unless otherwise noted. Product performance may not  
be indicated by the Electrical Characteristics if operated under different  
conditions.  
© Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
June, 2023 − Rev. 2  
BAV19/D  
 
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