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BAV20WS/D5 PDF预览

BAV20WS/D5

更新时间: 2024-01-27 05:51:46
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
3页 389K
描述
Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, SOD-323, 2 PIN

BAV20WS/D5 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Transferred包装说明:SOD-323, 2 PIN
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.18配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PDSO-G2
JESD-609代码:e0最大非重复峰值正向电流:1 A
元件数量:1端子数量:2
最高工作温度:150 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

BAV20WS/D5 数据手册

 浏览型号BAV20WS/D5的Datasheet PDF文件第2页浏览型号BAV20WS/D5的Datasheet PDF文件第3页 
BAV19WS thru BAV21WS  
Small-Signal Diodes  
SOD-323  
.012 (0.3)  
Cathode Band  
Mounting Pad Layout  
Top View  
0.055  
(1.40)  
0.062  
(1.60)  
Dimensions in inches  
and (millimeters)  
.059 (1.5)  
.043 (1.1)  
.010 (0.25)  
min.  
Features  
Mechanical Data  
Silicon Epitaxial Planar Diodes  
Case: SOD-323 Plastic Case  
For general purpose  
Weight: approx. 0.004g  
These diodes are also available in other case  
styles including: the DO-35 case with the type  
designation BAV19 - BAV21, the MiniMELF  
case with the type designation BAV100 - BAV103,  
the SOT-23 case with the type designation  
BAS19 - BAS21 and the SOD-123 case with the  
type designation BAV19W - BAV21W  
Marking  
Code:  
BAV19WS = A8  
BAV20WS = A9  
BAV21WS = AA  
Packaging Codes/Options:  
D5/10K per 13reel (8mm tape), 30K/box  
D6/3K per 7reel (8mm tape), 30K/box  
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Continuous Reverse Voltage  
BAV19WS  
BAV20WS  
BAV21WS  
100  
150  
200  
VR  
V
Repetitive Peak Reverse Voltage  
Forward DC Current at Tamb = 25°C  
BAV19WS  
BAV20WS  
BAV21WS  
120  
200  
250  
250(1)  
VRRM  
IF  
V
mA  
mA  
Rectified Current (Average)  
Half Wave Rectification with Resist. Load  
at Tamb = 25°C and f 50Hz  
IF(AV)  
200(1)  
Repetitive Peak Forward Current  
at f 50Hz, θ = 180°, Tamb = 25°C  
IFRM  
625(1)  
mA  
Surge Forward Current at t < 1s, Tj = 25°C  
Power Dissipation at Tamb = 25°C  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
IFSM  
Ptot  
RθJA  
Tj  
1
200(1)  
650(1)  
A
mW  
°C/W  
°C  
150(1)  
Storage Temperature Range  
TS  
–65 to +175(1)  
°C  
Note:  
(1) Valid provided that leads are kept at ambient temperature.  
3/28/01  

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