Datasheet > BAV20WS-HE3-08

BAV20WS-HE3-08

更新时间： 2024-02-20 08:59:25

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	83K
描述
DIODE GEN PURP 150V 250MA SOD323

阅读下载

中文翻译

获取价格

数据手册

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BAV20WS-HE3-08 数据手册

BAV19WS, BAV20WS, BAV21WS

www.vishay.com

Vishay Semiconductors

Small Signal Switching Diodes, High Voltage

FEATURES

• Silicon epitaxial planar diodes

• For general purpose

• AEC-Q101 qualified available

• Base P/N-E3 - RoHS-compliant, commercial

grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101

qualified

DESIGN SUPPORT TOOLS click logo to get started

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Models

Available

MECHANICAL DATA

Case: SOD-323

Weight: approx. 4.3 mg

Packaging codes / options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

PARTS TABLE

TYPE

CIRCUIT

PART

ORDERING CODE

TYPE MARKING

REMARKS

Tape and reel

DIFFERENTIATION

CONFIGURATION

BAV19WS-E3-08 or BAV19WS-E3-18

BAV19WS-HE3-08 or BAV19WS-HE3-18

BAV19WS

BAV20WS

BAV21WS

V_R= 100 V

Single

BAV20WS-E3-08 or BAV20WS-E3-18

BAV20WS-HE3-08 or BAV20WS-HE3-18

_R= 150 V

_R= 200 V

Single

BAV21WS-E3-08 or BAV21WS-E3-18

BAV21WS-HE3-08 or BAV21WS-HE3-18

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

100

UNIT

BAV19WS

BAV20WS

BAV21WS

BAV19WS

BAV20WS

BAV21WS

V_R

Continuous reverse voltage

V_R

150

V_R

200

V_RRM

I_F

120

Repetitive peak reverse voltage

Forward continuous current ⁽¹⁾

200

250

Rectified current (average) half wave

I_F(AV)

200

rectification with resistive load ⁽¹⁾

Repetitive peak forward current ⁽¹⁾

Surge forward current

f ≥ 50 Hz, θ = 180°

t < 1 s, T_J= 25 °C

I_FRM

I_FSM

P_tot

625

Power dissipation

200

Note

(1)

Valid provided that leads are kept at ambient temperature

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

R_thJA

R_thJL

T_j

VALUE

625

UNIT

K/W

°C

Thermal resistance junction to ambient air

Thermal resistance junction to lead

Junction temperature

450

150

Storage temperature range

Operating temperature range

T_stg

-65 to +150

-55 to +150

°C

T_op

°C

Rev. 2.2, 12-Jul-17

Document Number: 85726

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

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与BAV20WS-HE3-08相关器件

型号	品牌	获取价格	描述	数据表
BAV20WS-HE3-18	VISHAY	获取价格	DIODE GEN PURP 150V 250MA SOD323
BAV20WS-HG3-08	VISHAY	获取价格	DIODE GEN PURP 150V 250MA SOD323
BAV20WS-HG3-18	VISHAY	获取价格	DIODE GEN PURP 150V 250MA SOD323
BAV20WSQ	YANGJIE	获取价格	SOD-323
BAV20WS-T	RECTRON	获取价格	Rectifier Diode,
BAV20WS-T	MCC	获取价格	暂无描述
BAV20WS-T1	BL Galaxy Electrical	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
BAV20WS-T1-LF	BL Galaxy Electrical	获取价格	Rectifier Diode, 1 Element, 0.2A, 150V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
BAV20WS-T1-LF	WTE	获取价格	Rectifier Diode, 1 Element, 0.2A, 150V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
BAV20WS-T3	WTE	获取价格	Rectifier Diode, 1 Element, 0.2A, 150V V(RRM),

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