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BAV20W-V-G PDF预览

BAV20W-V-G

更新时间: 2024-01-14 03:48:17
品牌 Logo 应用领域
威世 - VISHAY 小信号开关二极管高压
页数 文件大小 规格书
5页 71K
描述
Small Signal Switching Diodes, High Voltage

BAV20W-V-G 技术参数

生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.59
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-LALF-W2JESD-609代码:e0
元件数量:1端子数量:2
最大输出电流:0.2 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:0.4 W认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.05 µs
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

BAV20W-V-G 数据手册

 浏览型号BAV20W-V-G的Datasheet PDF文件第2页浏览型号BAV20W-V-G的Datasheet PDF文件第3页浏览型号BAV20W-V-G的Datasheet PDF文件第4页浏览型号BAV20W-V-G的Datasheet PDF文件第5页 
BAV19W-V-G, BAV20W-V-G, BAV21W-V-G  
Vishay Semiconductors  
Small Signal Switching Diodes, High Voltage  
Features  
• Silicon epitaxial planar diodes  
• For general purpose  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC  
and in accordance to WEEE 2002/96/EC  
17431  
Mechanical Data  
Case: SOD-123  
Weight: approx. 9.4 mg  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
Parts Table  
Part  
Type differentiation  
VR = 100 V  
Ordering code  
Marking  
AS  
Remarks  
BAV19W-V-G  
BAV20W-V-G  
BAV21W-V-G  
BAV19W-V-G-18 or BAV19W-V-G-08  
BAV20W-V-G-18 or BAV20W-V-G-08  
BAV21W-V-G-18 or BAV21W-V-G-08  
Tape and reel  
Tape and reel  
Tape and reel  
V
V
R = 150 V  
R = 200 V  
AT  
AU  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Part  
Symbol  
VR  
Value  
100  
150  
200  
120  
200  
250  
Unit  
V
BAV19W-V-G  
BAV20W-V-G  
BAV21W-V-G  
BAV19W-V-G  
BAV20W-V-G  
BAV21W-V-G  
VR  
VR  
Continuous reverse voltage  
V
V
VRRM  
VRRM  
VRRM  
IF  
V
Repetitive peak voltage  
DC Forward current  
V
V
250 1)  
mA  
Rectified current (average) half  
wave rectification with resist.  
load  
2001)  
IF(AV)  
mA  
Repetitive peak forward  
current  
625 1)  
IFRM  
f 50 Hz  
mA  
IFSM  
Ptot  
Surge forward current  
Power dissipation  
t < 1 s  
1
A
410 1)  
mW  
Note  
1) Valid provided that leads are kept at ambient temperature  
** Please see document “Vishay Material Category Policy” www.vishay.com/doc?99902  
Document Number 85188  
Rev. 1.1, 26-Nov-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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