Datasheet > BAT54W-B0RFG

BAT54W-B0RFG

更新时间： 2024-02-16 01:34:05

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	130K
描述
200mW Surface Mount Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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BAT54W-B0RFG 数据手册

BAT54W/AW/CW/SW

Taiwan Semiconductor

Small Signal Product

200mW Surface Mount Schottky Barrier Diode

FEATURES

- Fast switching speed

- Low forward voltage

- Surface mount device type

- Moisture sensitivity level 1

- Pb free and RoHS compliant

- Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

- Ultra high-speed swithing

- Voltage clamping

SOT-323

- Protection circuits

MECHANICAL DATA

- Case: SOT-323 small outline plastic package

- High temperature soldering guaranteed: 260°C/10s

- Weight: 5mg (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

Peak Repetitive Reverse Voltage

VALUE

SYMBOL

V_RRM

V_R

UNIT

Reverse Voltage

Forward Current

I_F

200

K/W

^oC

Repetitive Peak Forward Current

Peak Forward Surge Current (tp=10ms)

Total Power Dissipation

I_FRM

I_FSM

P_tot

300

600

200

Thermal Resistance form Junction Ambient

Junction Temperature

R_thjA

T_J

625

125

Storage Temperature Range

T_STG

- 55 to + 150

PARAMETER

MIN

MAX

SYMBOL

UNIT

I_R=100uA

at I_F= 0.1 mA

at I_F= 1 mA

Reverse Breakdown Voltage

V_(BR)R

240

320

400

500

1000

2.0

at I_F= 10 mA

at I_F= 30 mA

at I_F= 100 mA

at V_R= 25 V

V_F

Forward Voltage

Reverse Current

Total Capacitance

I_R

V_R=1V, f=1.0MHz

C_T

at I_F= 10 mA through IR = 10 mA

to I_R= 1 mA, R_L= 100 Ω

Reverse Recovery Time

t_rr

Version: C14

Document Number: DS_S1404009

12 3 4 5

中文翻译

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