BAT54TDW

更新时间： 2024-11-25 04:50:27

品牌	Logo	应用领域
美台 - DIODES		二极管
页数	文件大小	规格书
1页	131K
描述
Surface Mount Schottky Barrier Diodes Arrays

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中文翻译

获取价格

数据手册

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BAT54TDW 数据手册

BAT54TW/ADW/CDW/SDW/BRW

SCHOTTKY DIODE

SOT-363

FEATURES

Power dissipation

P_D:

200 mW (Tamb=25℃)

Forward Current

I_F:

Reverse Voltage

V_R:

200 m A

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)

I_R

Test conditions

I_R= 100µA

MIN

MAX

UNIT

Reverse breakdown voltage

Reverse voltage leakage current

V_R=25V

µA

I_F=0.1mA

I_F=1mA

240

320

400

500

1000

V_F

Forward voltage

I_F=10mA

I_F=30mA

I_F=100mA

C_D

t _{r r}

V_R=1V, f=1MHz

Diode capacitance

Reverse recovery time

I_F=10mA through I_R=10mA

to I_R=1.0mA R_C=100Ω

中文翻译

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