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BAT54A-G3-08 PDF预览

BAT54A-G3-08

更新时间： 2024-01-06 06:05:53
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 96K
描述
DIODE ARRAY SCHOTTKY 30V SOT23

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中文翻译

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BAT54A-G3-08 数据手册

 浏览型号BAT54A-G3-08的Datasheet PDF文件第2页浏览型号BAT54A-G3-08的Datasheet PDF文件第3页浏览型号BAT54A-G3-08的Datasheet PDF文件第4页 
BAT54-G, BAT54A-G, BAT54C-G, BAT54S-G  
www.vishay.com  
Vishay Semiconductors  
Small Signal Schottky Diodes, Single and Dual  
FEATURES  
• These diodes feature very low turn-on voltage  
and fast switching  
• These devices are protected by a PN junction  
guardring against excessive voltage, such as  
electrostatic discharges  
• AEC-Q101 qualified available  
(part number on request)  
BAT54-G  
BAT54A-G  
• Base P/N-G3 - green, commercial grade  
3
3
• Material categorization:   
for definitions of compliance please see  
Top View  
www.vishay.com/doc?99912  
1
2
1
2
MECHANICAL DATA  
BAT54C-G  
BAT54S-G  
Case: SOT-23  
3
3
Weight: approx. 8.1 mg  
Top View  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
1
2
1
2
DESIGN SUPPORT TOOLS click logo to get started  
Models  
Available  
PARTS TABLE  
PART  
ORDERING CODE  
CIRCUIT CONFIGURATION  
Single  
TYPE MARKING  
REMARKS  
BAT54-G  
BAT54A-G  
BAT54C-G  
BAT54S-G  
BAT54-G3-08 or BAT54-G3-18  
BAT54A-G3-08 or BAT54A-G3-18  
BAT54C-G3-08 or BAT54C-G3-18  
BAT54S-G3-08 or BAT54S-G3-18  
L8  
Common anode  
Common cathode  
Dual serial  
L46  
L47  
L48  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VRRM  
IF  
VALUE  
30  
UNIT  
V
Repetitive peak reverse voltage  
Forward continuous current (1)  
Repetitive peak forward current (1)  
Surge forward current (1)  
Power dissipation  
200  
mA  
mA  
mA  
mW  
IFRM  
300  
tp < 1 s  
IFSM  
600  
Ptot  
230  
Note  
(1)  
Device on fiberglass substrate, see layout on next page.  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
430  
UNIT  
K/W  
°C  
Junction temperature  
125  
Storage temperature range  
Operating temperature range  
Tstg  
-65 to +150  
-55 to +125  
°C  
Top  
°C  
Note  
(1)  
Device on fiberglass substrate, see layout on next page.  
Rev. 1.4, 13-Feb-18  
Document Number: 83344  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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