Datasheet > BAS70-D0RFG

BAS70-D0RFG

更新时间： 2024-10-02 01:09:23

品牌	Logo	应用领域
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页数	文件大小	规格书
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描述
225mW SMD Switching Diode

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中文翻译

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数据手册

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BAS70-D0RFG 数据手册

BAS70 / -04 / -05 / -06

Taiwan Semiconductor

Small Signal Product

225mW SMD Switching Diode

FEATURES

- Low turn-on voltage

- Fast switching

- PN junction guard ring for transient and ESD protection

MECHANICAL DATA

- Case: SOT- 23, molded plastic

SOT-23

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260^oC/10s

- Weight: 0.008grams (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T_A=25℃ unless otherwise noted)

PARAMETER

Peak Repetitive Reverse Voltage

VALUE

SYMBOL

V_RRM

V_RWM

V_R

UNIT

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V_R(RMS)

I_F

Forward Continuous Current

Non-Repetitive Peak Forward Surge Current

Power Dissipation

(Note 1)

@ t ≦ 1.0 s

(Note 1)

K/W

°C

I_FSM

100

P_D

200

Thermal Resistance Junction to Ambient Air

Operating Junction Temperature

Storage Temperature Range

(Note 1)

R_θJA

625

T_J

-55 to + 125

-55 to + 150

T_STG

°C

PARAMETER

MIN

MAX

SYMBOL

UNIT

I_R= 10 µA

Reverse breakdown voltage

V_(BR)

410

1000

100.00

tp=300µs , I_F=1.0mA

tp＜300µs , I_F=15mA

V_F

Forward voltage

tp＜300µs , V_R=50V

I_R

C_J

t_rr

Reverse leakage current

Junction capacitance

Reverse revovery time

V_R= 0 V, f = 1 MHz

I_F= I_R= 10 mA, I_RR= 100 Ω, I_RR= 1 mA

Notes: 1. Valid provided that terminals are kept at ambient temperature

2. Test period ＜ 3000 µs

Version: E14

Document Number: DS_S1404012

12 3 4

中文翻译

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