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BAS70DW-05-13 PDF预览

BAS70DW-05-13

更新时间： 2024-02-16 07:11:37
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美台 - DIODES /
页数 文件大小 规格书
3页 76K
描述
Rectifier Diode, Schottky, 4 Element, 0.07A, 70V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-6

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BAS70DW-05-13 数据手册

 浏览型号BAS70DW-05-13的Datasheet PDF文件第2页浏览型号BAS70DW-05-13的Datasheet PDF文件第3页 
SPICE MODELS: BAS70TW BAS70DW-04 BAS70DW-05 BAS70DW-06 BAS70BRW  
BAS70TW /DW-04 /  
DW-05 /DW-06 /BRW  
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS  
Features  
·
·
·
·
·
Low Forward Voltage Drop  
SOT-363  
Fast Switching  
A
Dim  
A
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
Ultra-Small Surface Mount Package  
PN Junction Guard Ring for Transient and ESD Protection  
Available in Lead Free/RoHS Compliant Version (Note 3)  
B
B
C
TOP VIEW  
C
D
0.65 Nominal  
Mechanical Data  
G
H
F
0.30  
1.80  
¾
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
·
·
Case: SOT-363  
H
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
K
J
M
J
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
K
0.90  
0.25  
0.10  
0°  
L
D
F
Terminals: Solderable per MIL-STD-202, Method 208  
L
Also Available in Lead Free Plating (Matte Tin Finish  
annealed over Alloy 42 leadframe). Please see Ordering  
Information, Note 5, on Page 3  
M
a
All Dimensions in mm  
·
·
·
Orientation: See Diagrams Below  
Weight: 0.006 grams (approx.)  
Marking: See Diagrams Below & Page 3  
AC  
1
AC  
1
C3  
C1  
C2  
A2  
C2  
C2  
C2  
A2  
C1  
A1  
C2  
C1  
A2  
AC  
2
AC  
2
A1  
A2  
A3  
A2  
C2  
A1  
C1  
A2  
C1  
C1  
A1  
A1  
A1  
BAS70TW  
Marking: K73  
BAS70BRW  
Marking: K75  
BAS70DW-04*  
Marking: K74  
BAS70DW-06*  
Marking: K76  
BAS70DW-05*  
Marking: K71  
*Symmetrical configuration, no orientation indicator.  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
70  
V
VR(RMS)  
IFM  
RMS Reverse Voltage  
49  
70  
V
mA  
Forward Continuous Current (Note 1)  
Non-Repetitive Peak Forward Surge Current @ t < 1.0s  
Power Dissipation (Note 1)  
IFSM  
Pd  
100  
200  
625  
mA  
mW  
°C/W  
RqJA  
Thermal Resistance Junction to Ambient Air (Note 1)  
-55 to +125  
-65 to +125  
Tj  
TSTG  
Operating and Storage Temperature Range  
°C  
Electrical Characteristics @ TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
tp <300µs, IF = 1.0mA  
tp <300µs, IF = 15mA  
410  
1000  
mV  
mV  
VF  
Forward Voltage (Note 2)  
¾
tp < 300µs, VR = 50V  
VR = 0V, f = 1.0MHz  
IR  
Reverse Current (Note 2)  
Total Capacitance  
¾
¾
100  
2.0  
nA  
pF  
CT  
IF = IR = 10mA to IR = 1.0mA,  
Irr = 0.1 x IR, RL = 100W  
trr  
Reverse Recovery Time  
¾
5.0  
ns  
Notes: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website  
at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
DS30135.8NRoepvur.p8os-ef2ully added lead.  
1 of 3  
BAS70TW /DW-04 /DW-05 /DW-06 /BRW  
www.diodes.com  
ã Diodes Incorporated  
123

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