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BAS40-06T-13-F PDF预览

BAS40-06T-13-F

更新时间： 2024-11-28 03:43:43
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
3页 74K
描述
Rectifier Diode,

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BAS40-06T-13-F 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.76Base Number Matches：1

BAS40-06T-13-F 数据手册

 浏览型号BAS40-06T-13-F的Datasheet PDF文件第2页浏览型号BAS40-06T-13-F的Datasheet PDF文件第3页 
SPICE MODELS: BAS40T BAS40-04T BAS40-05T BAS40-06T  
BAS40T/-04T/-05T/-06T  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Lead-free  
Features  
·
·
·
·
·
Low Forward Voltage Drop  
Fast Switching  
SOT-523  
Ultra-Small Surface Mount Package  
PN Junction Guard Ring for Transient and ESD Protection  
Lead Free/RoHS Compliant (Note 3)  
Dim Min Max Typ  
A
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
C
B
Mechanical Data  
¾
¾
0.50  
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
G
H
·
·
Case: SOT-523  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
K
J
M
N
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
K
L
Terminals: Solderable per MIL-STD-202, Method 208  
L
D
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
M
N
a
·
·
·
·
Polarity: See Diagrams Below  
0°  
8°  
¾
Marking: See Diagrams Below & Page 2  
Weight: 0.002 grams (approximate)  
Ordering Information, see Page 2  
All Dimensions in mm  
TOP VIEW  
BAS40-05T Marking: 45  
BAS40-06T Marking: 46  
BAS40T Marking: 43  
BAS40-04T Marking: 44  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
40  
VR(RMS)  
IFM  
RMS Reverse Voltage  
28  
V
mA  
mA  
mW  
°C/W  
°C  
Forward Continuous Current (Note 1)  
Non-Repetitive Peak Forward Surge Current @ t = 1.0s  
Power Dissipation (Note 1)  
200  
600  
150  
833  
IFSM  
Pd  
RqJA  
Tj  
Thermal Resistance Junction to Ambient (Note 1)  
Operating Temperature Range  
-55 to +125  
-65 to +150  
TSTG  
Storage Temperature Range  
°C  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 2)  
IR = 10mA  
40  
¾
V
IF = 1.0mA, tp < 300ms  
IF = 40mA, tp < 300ms  
380  
1000  
mV  
mV  
VF  
Forward Voltage  
¾
VR = 30V  
IR  
Leakage Current (Note 2)  
Total Capacitance  
¾
¾
200  
5.0  
nA  
pF  
VR = 0, f = 1.0MHz  
CT  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100W  
trr  
Reverse Recovery Time  
¾
5.0  
ns  
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
3. No purposefully added lead.  
DS30265 Rev. 10 - 2  
1 of 3  
BAS40T/-04T/-05T/-06T  
www.diodes.com  
ã Diodes Incorporated  
123

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