Datasheet > BAS40-06

BAS40-06

更新时间： 2024-11-28 17:32:35

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描述
Reverse Voltage Vr : 40 V;Forward Current Io : 0.2 A;Forward Voltage Vf : 0.38 V;Reverse Current Ir : 0.2 uA;Recovery Time : 5 nS;Package / Case : SOT-23;Mounting Style : SMD/SMT

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中文翻译

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BAS40-06 数据手册

BAS40

BAS40-04

BAS40-05

BAS40-06

SILICON PLANAR SCHOTTKY DIODE

Pin Configuration:

1. ANODE

Pin Configuration:

1. ANODE

2. CATHODE

2. NC

3. ANODE/CATHODE

3. CATHODE

Pin Configuration:

1. ANODE

Pin Configuration:

1. CATHODE

2. CATHODE

3. ANODE

2. ANODE

3. CATHODE

Unit: inch (mm)

SOT-23 SMD Package

General Purpose Schottky Diode for High Speed switching

Absolute Maximum Ratings (per diode)

SYMBOL

VALUE

120

200

250

UNITS

DESCRIPTION

V_R

I_F

I_FSM

P_D

Reverse Voltage

Forward Current

Surge Forward Current t=10ms

Power Dissipation T_a= 25^oC

Tstg

- 55 to +150

150

Storage Temperature Range

Junction Temperature

^oC

Thermal Resistance

From junction to ambient

K/W

R_th(j-a)*

430

*Mounted on a ceramic substrate of 10mm x 8mm x 0.6mm

Electrical Characteristics (Ta=25 ^oC unless otherwise specified) (per diode)

SYMBOL TEST CONDITION

MIN

MAX

UNITS

DESCRIPTION

Reverse Braekdown Voltage

I_R= 10uA

V_R= 30V

V_R= 40V

I_F= 1mA

I_F= 10mA

I_F= 40mA

V_R= 40V

V_R

Reverse Current

I_R

0.38

0.50

1.00

5.00

Forward Voltage

V_F

C_T

Diode Capacitance

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BAS40-06/DG/B2,215	ETC	获取价格	DIODE ARRAY SCHOTTKY 40V TO236AB
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BAS40-06212	NXP	获取价格	0.12A, 2 ELEMENT, SILICON, SIGNAL DIODE
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BAS40-06-7-F	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE