Datasheet > BAS40-04

BAS40-04

更新时间： 2023-12-06 20:02:05

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1526K
描述
SOT-23

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中文翻译

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数据手册

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BAS40-04 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Diodes

SOT-23

BAS40/-04/-05/-06

SCHOTTKY BARRIER DIODE

FEATURES

Low Forward Voltage

Fast Switching

BAS40

MARKING:

BAS40-06

BAS40-05

BAS40-04

BAS40

BAS40-06

BAS40-05

BAS40-04

Solid dot = Green molding compound device.

Maximum Ratings @Ta=25℃

Parameter

Symbol

Limit

Unit

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

200

Forward Continuous Current

I_FM

I_O

I_FSM

P_D

Average Rectified Output Current

0.6

200

500

Non-Repetitive Peak Forward Surge Current @ t = 8.3ms

Power Dissipation

℃/W

℃

Thermal Resistance Junction to Ambient

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

T_J

-40 ~ +125

-55 ~ +150

T_STG

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)

I_R

Test conditions

I_R=10μA

Min

Max

200

Unit

Reverse breakdown voltage

Reverse voltage leakage current

V_R=30V

I_F=1mA

380

Forward voltage

V_F

C_D

I_F=40mA

1000

Diode capacitance

Reverse recovery time

V_R=0,f=1MHz

I_rr=1mA, I_R=I_F=10mA

R_L=100Ω

t _{r r}

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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BAS40-04-200MA-SOT-23	DGNJDZ	获取价格	SOT-23 Plastic-Encapsulate Diodes
BAS40-04212	NXP	获取价格	0.12A, 2 ELEMENT, SILICON, SIGNAL DIODE
BAS40-04-7	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40-04-7-F	WTE	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40-04-7-F	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40-04B5000	INFINEON	获取价格	Rectifier Diode, Schottky, 2 Element, 0.12A, 40V V(RRM), Silicon, SOT-23, 3-PIN
BAS40-04B5003	ROCHESTER	获取价格	0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3-PIN