5秒后页面跳转
BAS40-04HE3 PDF预览

BAS40-04HE3

更新时间: 2023-12-06 20:04:07
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 457K
描述
Tape : 3K/Reel, 120K/Ctn;

BAS40-04HE3 数据手册

 浏览型号BAS40-04HE3的Datasheet PDF文件第2页浏览型号BAS40-04HE3的Datasheet PDF文件第3页 
BAS40HE3  
Features  
Halogen Free. "Green" Device (Note 1)  
AEC-Q101 Qualified  
• Low Forward Voltage and Reverse Recovery Characteristics  
Epoxy Meets UL 94 V-0 Flammability Rating  
• Moisture Sensitivity Level 1  
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS  
Compliant. See Ordering Information)  
200mW,40V  
Schottky Barrier  
Diode  
Maximum Ratings  
Operating Junction Temperature Range: -55°C to +125°C  
Storage Temperature Range: -55°C to +150°C  
• Thermal Resistance: 500°C /W Junction to Ambient  
Maximum  
Maximum DC  
Blocking  
MCC  
Device  
Recurrent  
Peak Reverse  
Voltage  
Part Number  
Marking  
Voltage  
SOT-23  
BAS40HE3  
43  
44  
45  
46  
40V  
40V  
40V  
40V  
40V  
40V  
40V  
40V  
A
D
BAS40-04HE3  
BAS40-05HE3  
BAS40-06HE3  
B
C
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
F
E
IF(AV)  
IFSM  
Pd  
200mA  
600mA  
200mW  
25°C  
Peak Forward Surge  
Current  
tp<1s, Ta=25°C  
TA= 25 °C  
H
G
J
L
K
Power Dissipation  
DIMENSIONS  
MM  
INCHES  
DIM  
NOTE  
MIN MAX MIN MAX  
0.110 0.120 2.80 3.04  
0.083 0.104 2.10 2.64  
0.047 0.055 1.20 1.40  
0.034 0.041 0.85 1.05  
0.067 0.083 1.70 2.10  
0.018 0.024 0.45 0.60  
380mV  
IF=1.0mA  
IF=40mA  
A
B
C
D
E
F
G
H
J
Maximum  
Forward Voltage  
VF  
1000mV  
DC Reverse Current  
at Rated DC Blocking  
Voltage  
10 nA(TYP)  
200nA(MAX)  
tp < 300μs,VR = 30V  
IR=10µA  
IR  
0.01 0.15  
0.0004 0.006  
0.035 0.043 0.90 1.10  
0.003 0.007 0.08 0.18  
0.012 0.020 0.30 0.51  
K
L
Min Reverse  
Breakdown Voltage  
VBR  
CT  
trr  
40V  
5pF  
0.020  
0.50  
0.007  
0.20  
Typical Junction  
Capacitance  
Measured at  
1.0MHz, VR=0.0V  
Suggested Solder Pad Layout  
0.031  
0.800  
Maximum Reverse  
Recovery Time  
Irr=1mA, IR=IF=10mA  
RL=100Ω  
5.0ns  
0.035  
0.900  
Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine,  
0.079  
2.000  
inches  
mm  
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.  
Internal Structure:  
0.037  
0.950  
0.037  
0.950  
BAS40-05HE3  
BAS40-06HE3  
BAS40-04HE3  
BAS40HE3  
Rev.3-3-12012020  
1/3  
MCCSEMI.COM  

与BAS40-04HE3相关器件

型号 品牌 获取价格 描述 数据表
BAS40-04-HE3-08 VISHAY

获取价格

Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
BAS40-04-HE3-18 VISHAY

获取价格

Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
BAS40-04HY ROHM

获取价格

BAS40-04HY适用于小电流整流用途,是低VF的肖特基势垒二极管。采用非常普遍的SOT
BAS40-04HYFH ROHM

获取价格

BAS40-04HYFH适用于小电流整流用途,是低VF的肖特基势垒二极管。采用非常普遍的S
BAS4004LT1 MOTOROLA

获取价格

CASE 318 08, STYLE 12 SOT 23 (TO 236AB)
BAS40-04LT1 ONSEMI

获取价格

SCHOTTKY BARRIER DIODES
BAS40-04LT1 LRC

获取价格

Dual Series Schottky Barrier Diode
BAS40-04LT1/D ETC

获取价格

Dual Series Schottky Barrier Diode
BAS40-04LT1G ONSEMI

获取价格

SCHOTTKY BARRIER DIODES
BAS40-04Q YANGJIE

获取价格

Small Signal Schottky Diode