Datasheet > BAS21VMFH

BAS21VMFH

更新时间： 2023-09-03 20:25:07

品牌	Logo	应用领域
罗姆 - ROHM		开关二极管
页数	文件大小	规格书
7页	917K
描述
BAS21VMFH是适合一般整流用途的车载型高可靠性开关二极管。

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中文翻译

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BAS21VMFH 数据手册

Switching Diode

BAS21VMFH

Data Sheet

AEC-Q101 Qualified

lSeries

lDimensions (Unit : mm)

lLand Size Figure (Unit : mm)

0.9

High frequency switching

lApplication

General rectification

UMD2

lStructure

Cathode

lFeatures

ROHM : UMD2

JEDEC : SOD-323

1) Small power mold type

(UMD2)

: dot (year,week,day,factory)

Anode

2) High speed switching

lTaping Dimensions (Unit : mm)

3) High current overload capacity

lConstruction

Silicon epitaxial planar type

lAbsolute Maximum Ratings (T_a= 25°C)

Parameter

Repetitive peak reverse voltage

Reverse voltage

Conditions

Duty≦0.5

Limits

250

200

625

Symbol

V_RM

V_R

Unit

Direct reverse voltage

Direct forward current

tp ≦1s, Duty≦0.5

I_F

Forward current

I_FRM

Repetitive peak forward current

Square wave ,

t=1μs

t=10ms

I_FSM

Non-repetitive forward surge current

Non-repetitive at T_j=25ºC

P_tot

T_j

Glass epoxy mounted *

250

150

Power dissipation

°C

Operating junction temperature

Storage temperature

T_stg

-55 to +150 °C

* 20mm x 20mm x 0.8mm, FR-4 both side is all covered with copper.

lElectrical Characteristics (T_j= 25°C)

Parameter

Conditions

I_F=100mA

I_F=200mA

Symbol

V_F

Min. Typ. Max. Unit

0.75 0.93 1.0

0.8 1.05 1.25

Forward voltage

T_j=25ºC

100 nA

I_R

V_R=200V

Reverse current

T_j=150ºC

100

I_F=30mA, I_R=30mA, R_L=100Ω, I_rr=0.1×I_R

V_R=0V, f=1MHz

t_rr

C_t

Reverse recovery time

Terminal capacitance

Thermal resistance

2.5

R_th(j-a)

Junction to ambient

300 °C/W

www.rohm.com

2016.07 - Rev.A

1/4

12 3 4 5 6 7

中文翻译

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