Datasheet > BAS216WT

BAS216WT

更新时间： 2023-12-06 20:09:01

品牌	Logo	应用领域
先科 - SWST		开关小信号开关二极管
页数	文件大小	规格书
3页	200K
描述
小信号开关二极管

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BAS216WT 数据手册

BAS216WT

Silicon Epitaxial Planar Switching Diode

PINNING

DESCRIPTION

Cathode

Anode

Top View

Marking Code: "A"

Simplified outline SOD-523 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RRM

V_R

Value

Unit

Repetitive Peak Reverse Voltage

Reverse Voltage

Continuous Forward Current

I_F

250

500

Repetitive Peak Forward Current

I_FRM

Non-Repetitive Peak Forward Surge Current

at t = 1 µs

at t = 1 ms

at t = 1 s

0.5

I_FSM

Power Dissipation

P_tot

R_θJA

T_j

150

833

Thermal Resistance Junction to Ambient

Junction Temperature

℃/W

150

Storage Temperature Range

T_stg

- 65 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

V_F

Max.

Unit

Forward Voltage

at I_F= 1 mA

715

855

at I_F= 10 mA

at I_F= 50 mA

at I_F= 150 mA

1000

1250

Reverse Current

at V_R= 25 V

at V_R= 75 V

at V_R= 25 V, T_J= 150℃

at V_R= 75 V, T_J= 150℃

µA

I_R

Total Capacitance

at V_R= 0 V, f = 1 MHz

C_T

t_rr

Reverse Recovery Time

at I_rr= 0.1 X I_R, I_F= 10 mA, R_L= 100 Ω, V_R= 6 V

1 / 3

Dated: 29/04/2021 Rev: 01

12 3

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