Datasheet > BAS16WS-V_12

BAS16WS-V_12

更新时间： 2022-10-14 21:55:23

品牌	Logo	应用领域
威世 - VISHAY		二极管开关
页数	文件大小	规格书
4页	67K
描述
Small Signal Fast Switching Diode

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BAS16WS-V_12 数据手册

BAS16WS-V

Vishay Semiconductors

Electrical Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

V_F

Min.

Typ.

Max.

715

855

1000

1250

Unit

µA

I_F= 1 mA

I_F= 10 mA

V_F

I_R

Forward voltage

Leakage current

I_F= 50 mA

I_F= 150 mA

V_R= 25 V, T_J= 150 °C

V_R= 75 V

I_R

µA

V_R= 75 V, T_J= 150 °C

V_R= 0; f = 1 MHz

I_R

µA

C_D

Diode capacitance

I_F= 10 mA to I_R= 10 mA,

t_rr

Reverse recovery time

I_R= 1 mA, R_L= 100 Ω

Typical Characteristics

= 25 °C, unless otherwise specified

amb

10³

500

400

300

10²

T_j= 100 °C

T_j= 25 °C

200

100

10^{- 1}

10^{- 2}

100

T_amb(°C)

200

18185

18105

V_F(V)

Figure 1. Forward Characteristics

Figure 3. Admissible Power Dissipation vs. Ambient Temperature

10⁴

T_j= 25 °C

f = 1 kHz

T_j= 25 °C

1.1

f = 1 MHz

10³

1.0

10²

0.9

0.8

0.7

10^-2

10^-1

10²

17440

17438

V_R(V)

I_F(mA)

Figure 2. Dynamic Forward Resistance vs. Forward Current

Figure 4. Relative Capacitance vs. Reverse Voltage

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

Document Number 85752

Rev. 1.7, 12-Aug-10

123 4

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