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BAQ800T/R PDF预览

BAQ800T/R

更新时间: 2024-11-14 21:11:47
品牌 Logo 应用领域
恩智浦 - NXP 衰减器二极管
页数 文件大小 规格书
12页 77K
描述
DIODE SILICON, PIN DIODE, HERMETIC SEALED, GLASS PACKAGE-2, PIN Diode

BAQ800T/R 技术参数

生命周期:Obsolete包装说明:O-LALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.77其他特性:LOW LEAKAGE, LOW DISTORTION
应用:ATTENUATOR外壳连接:ISOLATED
配置:SINGLE最大二极管电容:12 pF
二极管元件材料:SILICON最大二极管正向电阻:10 Ω
二极管类型:PIN DIODE频带:LOW FREQUENCY
JESD-30 代码:O-LALF-W2少数载流子标称寿命:20 µs
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
表面贴装:NO技术:POSITIVE-INTRINSIC-NEGATIVE
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

BAQ800T/R 数据手册

 浏览型号BAQ800T/R的Datasheet PDF文件第2页浏览型号BAQ800T/R的Datasheet PDF文件第3页浏览型号BAQ800T/R的Datasheet PDF文件第4页浏览型号BAQ800T/R的Datasheet PDF文件第5页浏览型号BAQ800T/R的Datasheet PDF文件第6页浏览型号BAQ800T/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
k, halfpage  
BAQ800  
AM PIN diode  
1997 Aug 26  
Product specification  
File under Discrete Semiconductors, SC01  

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