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BAL99W

更新时间： 2024-11-18 22:05:39
品牌 Logo 应用领域
上华 - COMCHIP 二极管开关光电二极管
页数 文件大小 规格书
2页 107K
描述
Surface Mount Switching Diode

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BAL99W 数据手册

 浏览型号BAL99W的Datasheet PDF文件第2页 
Surface Mount Switching Diode  
COMCHIP  
www.comchip.com.tw  
Voltage: 70 Volts  
Current: 215mA  
BAV99W Thru BAW56W  
Features  
Fast Switching Speed  
Surface Mount PackageIdeally Suited  
for Automatic Insertio  
For General PurposeSwitching Applications  
High Conductance  
SOT-323  
.087 (2.2)  
.070 (1.8)  
Mechanical data  
Case: SOT - 323, Plastic  
Approx. Weight: 0.008 gram  
.016 (.40)  
Top View  
3
This diodes isalso available inother  
configurations including adual common  
cathode with typedesignation BAV70W,a dual  
common anodes withtype designation  
BAW56 and single chip inside withtype  
Designation BAL99W  
1
2
BAV99W  
BAL99W  
.056(1.4)  
.047(1.2)  
ANODE  
CATHODE  
1
1
2
3
3
ANODE  
ANODE  
2
CATHODE  
CATHODE  
CATHODE  
ANODE  
.087 (2.2)  
.078(2. 0)  
CATHODE  
ANODE  
1
1
.016 (.40) .016 (.40) max.  
3
3
CATHODE  
ANODE  
2
2
Dimensions in inches (millimeters)  
ANODE  
CATHODE  
BAV70W  
Maximum Ratings  
BAW56W  
Rating  
Symbol  
VR  
Value  
70  
215  
500  
Units  
VDC  
mAdc  
mAdc  
Continuous Reverse Voltage  
Peak Forward Current  
Peak Forward Surge Current  
IF  
IFM(surge)  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
225  
1.8  
556  
300  
Units  
mW  
mW/°C  
°C/W  
mW  
mW/°C  
°C/W  
°C  
Total Device Dissipation FR– 5 Board(1)  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation Alumina Substrate,(2) TA = 25°C  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
TA = 25°C  
PD  
RșJA  
PD  
2.4  
417  
–55 to +150  
RșJA  
TJ, Tst  
g
Electrical Characterics (TA = 25°C unless otherwise noted)  
Characteristic (OFF CHARACTERISTICS)  
Symbol  
V(BR)  
Max  
-
Units  
Vdc  
Min  
70  
Reverse Breakdown Voltage ( I(BR) = 100 uAdc )  
Reverse Voltage Leakage Current  
V
R = 25 Vdc, TJ = 150°C  
VR = 70 Vdc  
R = 70 Vdc, TJ = 150°C  
Diode Capacitance (VR = 0, f = 1.0 MHz))  
Forward Voltage F = 1.0 mAdc  
F = 10 mAdc  
I F = 50 mAdc  
F = 150 mAdc  
30  
2.5  
50  
1.5  
715  
855  
1000  
1250  
-
-
-
IR  
uAdc  
pF  
V
CD  
I
I
-
-
-
-
VF  
Trr  
mV  
nS  
I
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0mAdc) RL = 100ȍ  
6.0  
1.FR–5 = 1.0 X 0.75X 0.062 in. 2.Aluminum = 0.4X 0.3X 0.024 in. 99.5% aluminum.  
Page 1  
MDS0302003A  
12

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