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BA779S-GS08 PDF预览

BA779S-GS08

更新时间: 2024-11-18 19:21:27
品牌 Logo 应用领域
威世 - VISHAY 测试二极管
页数 文件大小 规格书
4页 85K
描述
Pin Diode, 30V V(BR),

BA779S-GS08 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.82最小击穿电压:30 V
最大二极管正向电阻:50 Ω二极管电阻测试电流:1.5 mA
二极管电阻测试频率:100 MHz二极管类型:PIN DIODE
少数载流子标称寿命:4 µs最高工作温度:125 °C
子类别:PIN Diodes表面贴装:YES
Base Number Matches:1

BA779S-GS08 数据手册

 浏览型号BA779S-GS08的Datasheet PDF文件第2页浏览型号BA779S-GS08的Datasheet PDF文件第3页浏览型号BA779S-GS08的Datasheet PDF文件第4页 
BA779 / BA779S  
VISHAY  
Vishay Semiconductors  
RF PIN Diodes - Single in SOT-23  
Features  
• Wide frequency range 10 MHz to 1 GHz  
3
Applications  
Current controlled HF resistance in adjustable  
attenuators  
1
2
16923  
Mechanical Data  
Case: SOT-23 Plastic case  
Weight: approx. 8.1 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Type differentiation  
Ordering code  
BA779-GS18 or BA779-GS08  
BA779S-GS18 or BA779S-GS08  
Remarks  
BA779  
V
V
= 30 V, Z > 5 k  
Tape and Reel  
Tape and Reel  
R
R
r
BA779S  
= 30 V, Z > 9 kΩ  
r
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Symbol  
Value  
30  
Unit  
Reverse voltage  
Forward current  
V
V
R
I
50  
mA  
F
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
500  
Unit  
K/W  
Junction ambient  
on PC board  
50 mm x 50 mm x 1.6 mm  
R
thJA  
Junction temperature  
T
125  
°C  
°C  
j
Storage temperature range  
T
- 55 to + 125  
stg  
Document Number 85532  
Rev. 1.6, 09-Jul-04  
www.vishay.com  
1

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