是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SFM |
包装说明: | HSIP-12 | 针数: | 12 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.76 |
模拟集成电路 - 其他类型: | BATTERY CHARGE CONTROLLER | 控制模式: | VOLTAGE-MODE |
最大输入电压: | 20 V | 最小输入电压: | 10 V |
标称输入电压: | 12 V | JESD-30 代码: | R-PSFM-T12 |
JESD-609代码: | e3/e2 | 功能数量: | 1 |
端子数量: | 12 | 最高工作温度: | 85 °C |
最低工作温度: | -30 °C | 最大输出电流: | 0.4 A |
封装主体材料: | PLASTIC/EPOXY | 封装等效代码: | SIP12,TB |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 电源: | 12 V |
认证状态: | Not Qualified | 子类别: | Power Management Circuits |
最大供电电流 (Isup): | 11.4 mA | 标称供电电压 (Vsup): | 12 V |
表面贴装: | NO | 切换器配置: | SINGLE |
技术: | BIPOLAR | 温度等级: | OTHER |
端子面层: | TIN/TIN COPPER | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BA317113 | NXP |
获取价格 |
DIODE 0.1 A, 40 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode |
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BA317116 | NXP |
获取价格 |
DIODE 0.1 A, 40 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode |
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BA317133 | NXP |
获取价格 |
DIODE 0.1 A, 40 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode |
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BA317136 | NXP |
获取价格 |
DIODE 0.1 A, 40 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode |
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BA317143 | NXP |
获取价格 |
DIODE 0.1 A, 40 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode |
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BA317153 | NXP |
获取价格 |
DIODE 0.1 A, 40 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode |
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BA317T/R | NXP |
获取价格 |
DIODE 0.1 A, 40 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode |
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BA318 | NXP |
获取价格 |
High-speed diodes |
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BA318113 | NXP |
获取价格 |
DIODE 0.1 A, 60 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode |
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BA318116 | NXP |
获取价格 |
DIODE 0.1 A, 60 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode |
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