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BA30ZN PDF预览

BA30ZN

更新时间: 2024-01-11 15:41:29
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
3页 1251K
描述
30 Ampere Avalanche Type Block Rectifier Diodes for Mitsubishi Alternator

BA30ZN 数据手册

 浏览型号BA30ZN的Datasheet PDF文件第2页浏览型号BA30ZN的Datasheet PDF文件第3页 
                      
                      
                      
                      
                      
                      
                      
                      
                     
                     
                     
                     
                     
                     
                     
                     
                     
                     
BA30ZP/BA30ZN  
BA30ZP/BA30ZN  
Pb Free Plating Product  
30 Ampere Avalanche Type Block Rectifier Diodes for Mitsubishi Alternator  
BLOCK/TO-230/BA/MR/K series  
Feature:  
Low leakage  
Low forward voltage drop  
High current capability  
High forward surge current capability  
Application:  
Block Diode/Alternator Diode with AEC-Q101 Grade Quality  
Stack Silicon Diffused Diode alternative  
Special for Automotive AC Alternator rectifier application  
Mechanical Data:  
Technology: Latest Glass Passivation Pellet/Cu Clip Bonding  
Case: Vacuum soldered/Sintered temperature < 260  
Cathode Polarity: As marked on body  
Lead: Plated lead, solderable per MIL-STD-202E method 208C  
Mounting: BLOCK/TO-230/BA/MR/K series package type  
Case  
Lead  
Case  
Lead  
BA30ZP  
Positive  
Suffix:"P"  
BA30ZN  
Negative  
Suffix:"N"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
·
·
·
Ratings at 25ambient temperature unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load  
For capacitive load derate current by 20%  
BA30ZP/BA30ZN  
Electrical Characteristics @ 25  
SYMBOLS  
MIN  
NOMINAL  
MAX  
UNITS  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
VRRM  
VRRM  
VRSM  
VDC  
20  
20  
20  
Volts  
Transient Peak Reverse Voltage  
DC Blocking Voltage  
30  
Average Rectified Forward Current (Tc=125)  
Io  
Amps  
Amps  
Repetitive Peak Reverse Surge Current  
Tc=10msec Dury Cycle1%  
IRSM  
Vbr1  
30  
Breakdown Voltage (Vbr@ir=100mA, Tc=25)  
24  
25 -27  
32  
40  
Volts  
Volts  
Vz  
Zener Voltage  
Vbr2  
VF  
IFSM  
IR  
Ir=90Amps, Tc=150, PW=80usec  
Forward Voltage Drop @If=100Amps300usec  
1.05  
400  
1.10  
2.0  
Volts  
Amps  
uAmps  
Peak Forward Surge Current  
Reverse Leakage (VR=17Vdc) TA=25℃  
Operating and Storage Junction Temperature Range  
1.0  
TJ ,TSTG  
-65 to +175  
Notes: 1. Enough heatsink must be considered in application.  
Page 1/3  
http://www.thinkisemi.com.tw/  
Rev.09T  
© 1995 Thinki Semiconductor Co., Ltd.  

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