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B58601E3215B646 PDF预览

B58601E3215B646

更新时间: 2024-03-03 10:08:27
品牌 Logo 应用领域
东电化 - TDK /
页数 文件大小 规格书
10页 542K
描述
Pressure sensor die, open bridge

B58601E3215B646 数据手册

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Pressure sensors  
C32 series  
B58601E32**B615/…B646  
Gauge pressure sensor die C32/1 (open bridge)  
Applications  
Medical devices  
Automotive  
Medical  
Features  
Piezoresistive MEMS technology  
Small dimensions: 1.65 × 1.65 mm  
Square diaphragm  
Measured media (back side):  
Non-aggressive gases and fluids.  
Unsuitable for substances, which react with glass or silicon.  
Wheatstone bridge with mV output,  
ratiometric to supply voltage  
Rated pressure range: 1.6 up to 40 bar  
Outstanding long-term stability  
Delivery mode  
Tape, Tray  
Dimensional drawings  
150  
A B  
1650±100  
300±5  
800±20  
700  
700  
Note1  
100  
B
X10  
X5  
X1  
X10  
A
allowable edge disruptions  
80 µm max.  
allowable edge disruptions  
50 µm max.  
X10  
X4  
X2  
X10  
60  
X3  
electrical diagram:  
495  
700  
X5  
700  
Si 100  
glass  
p
BOROFLOATTM  
X10  
X4  
Wire bond pad area  
Bond wires should not touch die surface  
outside specified area  
R2  
R4  
R1  
R3  
Note1: geometry of diaphragm depends on  
specification  
X1 : Vout+  
X2 : VDD–  
X3 : VDD–  
X4 : Vout–  
X5 : VDD+  
X1  
X2 X3  
all dimensions in µm  
X10 : Substrate  
TPS PRS SD PD  
2021-03-08  
Please read Cautions and warnings and  
Page 2 of 10  
Important notes at the end of this document.  

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