Datasheet > B5818W

B5818W

更新时间： 2024-09-26 14:52:15

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1313K
描述
SOD-123

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中文翻译

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数据手册

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B5818W 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOD-123 Plastic-Encapsulate Diodes

B5817W-5819W ^{SCHOTTKY BARRIER DIODE}

SOD-123

FEATURES

For use in low voltage, high frequency inverters

Free wheeling, and polarity protection applications.

MARKING:

B5817W:SJ

B5818W:SK

B5819W:SL

The marking bar indicates the cathode

Solid dot = Green molding compound device

Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃

Unit

Parameter

Symbol

B5817W

B5818W

B5819W

Non-Repetitive Peak Reverse Voltage

V_RM

V_RRM

V_RWM

V_R

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V_R(RMS)

I_O

Average Rectified Output Current

Non-repetitive Peak Forward Surge Current

I_FSM

I_FRM

@t=8.3ms

Repetitive Peak Forward Current

Power Dissipation

1.5

500

Thermal ResistanceJunctionto

Ambient

R_θJA

200

℃/W

℃

-40~+125

OperationJunction temperature Range

Storage Temperature Range

T_STG

-55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

I_R= 1mA

B5817W

Reverse breakdown voltage

V_(BR)

B5818W

B5819W

B5817W

B5818W

B5819W

V_R=20V

V_R=30V

V_R=40V

Reverse voltage leakage current

I_R

B5817W

B5818W

B5819W

I_F=1A

I_F=3A

I_F=1A

I_F=3A

I_F=1A

I_F=3A

0.45

0.75

0.55

0.875

0.6

Forward voltage

V_F

0.9

Diode capacitance

C_D

V_R=4V, f=1MHz

120

www.jscj-elec.com

Rev. - 2.2

12 3 4

中文翻译

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