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B5818WS PDF预览

B5818WS

更新时间: 2024-02-07 05:46:59
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 332K
描述
1 Amp Schottky Barrier Rectifier 20 - 40 Volts

B5818WS 数据手册

 浏览型号B5818WS的Datasheet PDF文件第2页浏览型号B5818WS的Datasheet PDF文件第3页 
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
M C C  
B5817WS  
Thru  
TM  
Micro Commercial Components  
B5819WS  
Features  
·
Halogen free available upon request by adding suffix "-HF"  
Guard Ring Protection  
Low Forward Voltage Drop  
For Use in Low Voltage, High Frequency Inverters  
High Surge Current Capability  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Lead Free Finish/RoHS Compliant("P" Suffix  
designates RoHS Compliant. See ordering information)  
1 Amp Schottky  
Barrier Rectifier  
20 - 40 Volts  
·
SOD-323  
A
Maximum Ratings  
B
Operating Temperature: -65R to +125R  
Storage Temperature: -65R to +150R  
Maximum Thermal Resistance; 500R/W Junction To Ambient  
C
E
Maximum  
Recurrent  
Marking Peak Reverse  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
20V  
Maximum  
RMS  
Voltage  
MCC  
Part  
Number  
B5817WS  
B5818WS  
B5819WS  
Device  
H
D
SJ  
SK  
SL  
20V  
30V  
40V  
14V  
21V  
28V  
30V  
40V  
J
G
DIM  
INCHES  
MIN  
MM  
NOTE  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
MAX  
.107  
.071  
.053  
.045  
.016  
.018  
.010  
.006  
MIN  
2.30  
1.60  
1.15  
0.80  
0.25  
0.10  
0.10  
-----  
MAX  
2.70  
1.80  
1.35  
1.15  
0.40  
0.45  
0.25  
0.15  
Average Forward  
Current  
IF(AV)  
1.0A  
Tc = 90R  
A
B
C
D
E
G
H
J
.090  
.063  
.045  
.031  
.010  
.004  
.004  
-----  
Peak Forward Surge  
Current  
IFSM  
10A  
8.3ms, half sine  
Maximum  
0.45V  
0.55V  
0.60V  
0.75V  
0.875V  
0.90V  
IFM = 1.0A;  
TJ = 25R (Note 1)  
Instantaneous  
Forward Voltage  
B5817WS  
VF  
IFM = 3A;  
B5818WS  
B5819WS  
TJ = 25R(Note 1)  
SUGGESTED SOLDER  
PAD LAYOUT  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
0.074"  
TA = 25R  
1mA  
IR  
0.027”  
Typical junction  
capacitance  
Measured at  
1.0MHz , VR=4.0V  
CJ  
120pF  
Notes: 1. Pulse Test: Pulse Width 300usec, Duty Cycle 2%  
0.022”  
www.mccsemi.com  
Revision: B  
2013/01/01  
1 of 3  

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