Datasheet > B5818WS

B5818WS

更新时间： 2023-12-06 20:03:35

品牌	Logo	应用领域
鲁光 - LGE		小信号肖特基二极管
页数	文件大小	规格书
2页	1319K
描述
小信号肖特基二极管

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中文翻译

获取价格

数据手册

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B5818WS 数据手册

B5817WS/B5818WS/B5819WS

SOD-323 Plastic-Encapsulate Schottky Barrier Diode

SOD-323

Fature

z High Current Capability

z Low Forward Voltage Drop

Mechanical Data

z SOD-323 Small Outline Plastic Package

z Polarity: Color band denotes cathode end

z Mounting Position: Any

Marking: B5817WS: SJ

B5818WS: SK

Dimensions in inches and (millimeters)

B5819WS: SL

Maximum Ratings & Thermal Characteristics (Ratings at 25℃ambient temperature unless otherwise specified.)

B5817WS B5818WS B5819WS

Parameters

Symbol

VRRM

Unit

Maximum repetitive peak reverse voltage

1.0

Maximum RMS voltage

VRMS

VDC

IFM

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current 8.3 ms single half

sine-wave

IFSM

Typical thermal resistance

RθJA

400

250

℃/W

Power Dissipation

℃

Operating junction temperature

125

Storage temperature range

TSTG

-50-+150

℃

Electrical Characteristics (Ratings at 25℃ambient temperature unless otherwise specified).

B5817WS B5818WS B5819WS

Parameters

Symbol

Test conditions

Unit

IF = 1.0A

IF = 3.0A

0.450

0.750

0.550

0.875

0.600

0.900

Maximum forward voltage

Maximum reverse breakdown voltage

IR=1mA

1.0

120

VR=20V B5817WS

VR=30V B5818WS

VR=40V B5819WS

Maximum reverse Current

Type junction capacitance

VR = 4.0V, f = 1MHz

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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