Datasheet > B5818W

B5818W

更新时间： 2024-09-25 08:46:03

品牌	Logo	应用领域
金誉半导体 - HTSEMI		肖特基二极管
页数	文件大小	规格书
2页	417K
描述
SCHOTTKY BARRIER DIODE

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中文翻译

获取价格

数据手册

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B5818W 数据手册

B5817W-5819W

SCHOTTKY BARRIER DIODE

SOD-123

FEATURES

For use in low voltage, high frequency inverters

Free wheeling, and polarity protection applications.

MARKING: B5817W: SJ

B5818W:SK

B5819W: SL

Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃

Unit

Parameter

Symbol

B5817W

B5818W

B5819W

Non-Repetitive Peak reverse voltage

V_RM

V_RRM

V_RWM

V_R

Peak repetitive Peak reverse voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V_R(RMS)

Average Rectified Output Current

Peak forward surge current @=8.3ms

Repetitive Peak Forward Current

I_O

I_FSM

I_FRM

1.5

Power Dissipation

500

250

Thermal

Ambient

Resistance

Junction

℃/W

R_θJA

T_STG

Storage temperature

-65~+150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

I_R= 1mA

B5817W

Reverse breakdown voltage

V_(BR)

B5818W

B5819W

B5817W

B5818W

B5819W

V_R=20V

V_R=30V

V_R=40V

Reverse voltage leakage current

I_R

B5817W

B5818W

B5819W

I_F=1A

I_F=3A

I_F=1A

I_F=3A

I_F=1A

I_F=3A

0.45

0.75

0.55

0.875

0.6

Forward voltage

V_F

0.9

Diode capacitance

C_D

V_R=4V, f=1MHz

120

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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