B2M, B4M, B6M
Vishay General Semiconductor
www.vishay.com
Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
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• UL recognized, file number E54214
~
• Ideal for printed circuit boards
• Applicable for automative insertion
• Middle surge current capability
• Recommended for non-automotive applications
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
~
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
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for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
Case Style MBM
PRIMARY CHARACTERISTICS
MECHANICAL DATA
Package
MBM
0.5 A
Case: MBM
IF(AV)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VRRM
IFSM
200 V, 400 V, 600 V
30 A
5 μA
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
IR
VF at IF = 0.5 A
TJ max.
1.0 V
150 °C
Quad
Polarity: As marked on body
Diode variations
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B2M
B2
B4M
B4
B6M
B6
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
V
V
V
Maximum DC blocking voltage
Maximum average forward output rectified current (fig. 1)
on glass-epoxy PCB
IF(AV)
0.5 (1)
A
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
Rating for fusing (t < 8.3 ms)
I2t
5.0
A2s
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
Note
(1)
On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
B2M
B4M
B6M
UNIT
Maximum instantaneous forward
voltage drop per diode
IF = 0.5 A
VF
1.0
V
TA = 25 °C
5.0
100
13
Maximum DC reverse current at rated
DC blocking voltage per diode
IR
μA
pF
TA = 125 °C
Typical junction capacitance per diode 4.0 V, 1 MHz
CJ
Revision: 16-Aug-13
Document Number: 88898
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000