Datasheet > B4M-E3

B4M-E3

更新时间： 2022-02-26 14:40:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	79K
描述
Miniature Glass Passivated Single-Phase Bridge Rectifiers

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数据手册

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B4M-E3 数据手册

B2M, B4M, B6M

Vishay General Semiconductor

www.vishay.com

Miniature Glass Passivated Single-Phase Bridge Rectifiers

FEATURES

• UL recognized, file number E54214

• Ideal for printed circuit boards

• Applicable for automative insertion

• Middle surge current capability

• Recommended for non-automotive applications

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification

for power supply, lighting ballaster, battery charger, home

appliances, office equipment, and telecommunication

applications.

Case Style MBM

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Package

MBM

0.5 A

Case: MBM

I_F(AV)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

V_RRM

I_FSM

200 V, 400 V, 600 V

30 A

5 μA

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

I_R

V_Fat I_F= 0.5 A

T_Jmax.

1.0 V

150 °C

Quad

Polarity: As marked on body

Diode variations

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

B2M

B4M

B6M

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

200

140

200

400

280

400

600

420

600

Maximum DC blocking voltage

Maximum average forward output rectified current (fig. 1)

on glass-epoxy PCB

I_F(AV)

0.5 ⁽¹⁾

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load (JEDEC method)

I_FSM

Rating for fusing (t < 8.3 ms)

I²t

5.0

A²s

°C

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

Note

(1)

On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

B2M

B4M

B6M

UNIT

Maximum instantaneous forward

voltage drop per diode

I_F= 0.5 A

V_F

1.0

T_A= 25 °C

5.0

100

Maximum DC reverse current at rated

DC blocking voltage per diode

I_R

μA

T_A= 125 °C

Typical junction capacitance per diode 4.0 V, 1 MHz

C_J

Revision: 16-Aug-13

Document Number: 88898

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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