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B4M-E3 PDF预览

B4M-E3

更新时间: 2024-11-30 01:25:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 79K
描述
Miniature Glass Passivated Single-Phase Bridge Rectifiers

B4M-E3 数据手册

 浏览型号B4M-E3的Datasheet PDF文件第2页浏览型号B4M-E3的Datasheet PDF文件第3页浏览型号B4M-E3的Datasheet PDF文件第4页 
B2M, B4M, B6M  
Vishay General Semiconductor  
www.vishay.com  
Miniature Glass Passivated Single-Phase Bridge Rectifiers  
FEATURES  
~
• UL recognized, file number E54214  
~
• Ideal for printed circuit boards  
• Applicable for automative insertion  
• Middle surge current capability  
• Recommended for non-automotive applications  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
~
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave rectification  
~
for power supply, lighting ballaster, battery charger, home  
appliances, office equipment, and telecommunication  
applications.  
Case Style MBM  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
Package  
MBM  
0.5 A  
Case: MBM  
IF(AV)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
VRRM  
IFSM  
200 V, 400 V, 600 V  
30 A  
5 μA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
IR  
VF at IF = 0.5 A  
TJ max.  
1.0 V  
150 °C  
Quad  
Polarity: As marked on body  
Diode variations  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
B2M  
B2  
B4M  
B4  
B6M  
B6  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC blocking voltage  
Maximum average forward output rectified current (fig. 1)  
on glass-epoxy PCB  
IF(AV)  
0.5 (1)  
A
A
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
IFSM  
30  
Rating for fusing (t < 8.3 ms)  
I2t  
5.0  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Note  
(1)  
On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
B2M  
B4M  
B6M  
UNIT  
Maximum instantaneous forward  
voltage drop per diode  
IF = 0.5 A  
VF  
1.0  
V
TA = 25 °C  
5.0  
100  
13  
Maximum DC reverse current at rated  
DC blocking voltage per diode  
IR  
μA  
pF  
TA = 125 °C  
Typical junction capacitance per diode 4.0 V, 1 MHz  
CJ  
Revision: 16-Aug-13  
Document Number: 88898  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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