B320W-ST THRU B3200W-ST
3A Surface Mount Schottky Barrier Rectifiers
■ Features
■ Outline
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
SOD-123ST
0.154(3.9)
0.138(3.5)
0.016(0.4) Typ.
• High current capability, low forward voltage drop.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Suffix "G" indicates Halogen-free part, ex.B320WG-ST.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0.039(1.0)
0.031(0.8)
0.079(2.0)
0.063(1.6)
0.008(0.20)Max.
0.055(1.4)
0.039(1.0)
0.039 (1.0)
0.024 (0.6)
0.096(2.45)
0.081(2.05)
■ Mechanical data
0.051(1.3)
0.035(0.9)
0.039(1.0)
0.031(0.8)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123ST
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Weight : Approximated 0.0155 gram
0.057(1.45)
0.041(1.05)
Dimensions in inches and (millimeters)
■ Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Conditions
Symbol
IO
MIN.
TYP.
MAX.
3.0
UNIT
A
Forward rectified current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Forward surge current
IFSM
70
A
VR = VRRM TA = 25OC
VR = VRRM TA = 100OC
0.1
20
IR
Reverse current
mA
CJ
Diode junction capacitance
Thermal resistance
f=1MHz and applied 4V DC reverse voltage
Junction to ambient
250
55
pF
OC/W
OC
RθJA
TSTG
Storage temperature
-55
+175
Max.
Max. forward voltage
@3A, TA = 25OC
VF (V)
Max.
RMS voltage
VRMS (V)
Max. DC
blocking voltage
VR (V)
repetitive peak
reverse voltage
VRRM (V)
Operating temperature
TJ (OC)
Symbol
Marking code
B320W-ST
B340W-ST
B360W-ST
B3100W-ST
B3150W-ST
B3200W-ST
32
34
20
40
14
28
20
40
0.45
0.50
0.70
0.81
0.87
0.90
-55 ~ +150
-55 ~ +175
36
60
42
60
310
315
320
100
150
200
70
100
150
200
105
140
Document ID : DS-12K3R
Revised Date : 2013/07/17
Revision : C2
1