Datasheet > AX9902MS

AX9902MS

更新时间： 2024-02-26 19:05:03

品牌	Logo	应用领域
易亨 - ANACHIP		/
页数	文件大小	规格书
8页	800K
描述
2N and 2P-Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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AX9902MS 数据手册

AF9902M

2N and 2P-Channel Enhancement Mode Power MOSFET

Features

General Description

- Simple Drive Requirement

The advanced power MOSFET provides the designer

with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

- Low On-Resistance

- Full Bridge Application on LCD Monitor Inverter

- Pb Free Plating Product

The SO-8 package is universally preferred for all

commercial-industrial surface mount applications and

suited for low voltage applications such as DC/DC

converters.

Product Summary

BV_DSS(V)

R_DS(ON)(mΩ)

I_D(A)

4.3

-3.3

-30

Pin Descriptions

Pin Assignments

Pin Name

N1G

N1D/P1D

Description

Gate (NMOS1)

Drain(NMOS1) / Drain(PMOS1)

N1G

P1G

N1D/P1D

N1S/N2S

P1S/P2S

N2D/P2D

N1S/N2S Source(NMOS1) / Source(NMOS2)

N2G

P2G

N2D/P2D

Gate (NMOS2)

Gate (PMOS2)

Drain(NMOS2) / Drain(PMOS2)

N2G

P2G

P1S/P2S Source(PMOS1) / Source(PMOS2)

SO-8

P1G

Gate (PMOS1)

Ordering information

A X 9902M X

Packing

Package

S: SO-8

Feature

F :MOSFET

Blank : Tube or Bulk

A : Tape & Reel

Block Diagram

P1S

P2S

P1G

N1G

P2G

P1N1D

P2N2D

N2G

N2S

N1S

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of

this product. No rights under any patent accompany the sale of the product.

Rev. 1.0 Sep 22, 2005

1/8

12 3 4 5 6 7 8

中文翻译

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