ATP212
Ordering number : ENA1507A
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
ATP212
Features
•
•
Low ON-resistance
Large current
•
•
4V drive
Slim package
•
•
Halogen free compliance
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
60
±20
35
DSS
V
V
GSS
I
A
D
Drain Current (PW 10 s)
I
PW 10 s, duty cycle 1%
105
40
A
≤
μ
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
P
Tc=25 C
W
°
D
Tch
150
C
C
°
°
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
19
18
mJ
A
AS
I
AV
Note : 1 V =10V, L=100 H, I =18A
*
μ
DD
2 L 100 H, Single pulse
AV
*
≤
μ
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: ATPAK
7057-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ATP212-TL-H
1.5
6.5
Packing Type: TL
Marking
4.6
2.6
0.4
0.4
ATP212
4
LOT No.
TL
Electrical Connection
2,4
2
0.55
1
3
0.8
0.6
1 : Gate
0.4
2.3
2.3
2 : Drain
3 : Source
4 : Drain
1
3
SANYO : ATPAK
http://semicon.sanyo.com/en/network
61312 TKIM/62409PA TKIM TC-00001998
No. A1507-1/7