Datasheet > ATP108

ATP108

更新时间： 2024-01-06 04:26:07

品牌	Logo	应用领域
三洋 - SANYO		晶体开关晶体管脉冲通用开关
页数	文件大小	规格书
4页	258K
描述
P-Channel Silicon MOSFET General-Purpose Switching Device Applications

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中文翻译

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技术参数
数据手册

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ATP108 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8536.69.40.40
风险等级：	5.64	Is Samacsys：	N
连接器类型：	BOARD CONNECTOR	Base Number Matches：	1

ATP108 数据手册

ATP108

Continued from preceding page.

Ratings

typ

Parameter

Symbol

Conditions

=-- 10V, I =-- 1mA

Unit

min

--1.5

max

--2.6

Cutoff Voltage

(off)

Forward Transfer Admittance

| yfs |

=-- 10V, I =--35A

(on)1

(on)2

=-- 35A, V =-- 10V

11.5

3850

560

390

10.4

16.5

mΩ

Static Drain-to-Source On-State Resistance

=-- 18A, V =-- 4.5V

Input Capacitance

Ciss

=--20V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Coss

Crss

(on)

See speciﬁed Test Circuit.

340

290

79.5

Turn-OFF Delay Time

Fall Time

(off)

Total Gate Charge

=--20V, V =--10V, I =--70A

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Qgs

Qgd

=--20V, V =--10V, I =--70A

I =--70A, V =0V

--1.05

--1.5

Package Dimensions

unit : mm (typ)

7057-001

1.5

6.5

4.6

2.6

0.4

0.55

0.8

0.6

1 : Gate

2 : Drain

0.4

2.3

3 : Source

4 : Drain

SANYO : ATPAK

Switching Time Test Circuit

V = --20V

--10V

= --35A

R =0.57Ω

OUT

PW=10μs

D.C.≤1%

ATP108

P. G

50Ω

No. A1604-2/4

123 4

中文翻译

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