Datasheet > AT93C56B_14

AT93C56B_14

更新时间： 2024-11-25 01:19:15

品牌	Logo	应用领域
爱特美尔 - ATMEL		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
21页	854K
描述
3-wire Serial EEPROM

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中文翻译

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数据手册

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AT93C56B_14 数据手册

AT93C56B and AT93C66B

3-wire Serial EEPROM

2K (256 x 8 or 128 x 16) and 4K (512 x 8 or 256 x 16)

DATASHEET

Features

 Low-voltage operation

 V_CC= 1.7V to 5.5V

 User-selectable internal organization

 2K: 256 x 8 or 128 x 16

 4K: 512 x 8 or 256 x 16

 3-wire serial interface

 Sequential Read operation

 2MHz clock rate (5V)

 Self-timed write cycle (5ms max)

 High reliability

 Endurance: 1,000,000 write cycles

 Data retention: 100 years

 8-lead JEDEC SOIC, 8-lead TSSOP, 8-pad UDFN, 8-pad XDFN, and

8-ball VFBGA packages

Description

The Atmel^®AT93C56B/66B provides 2,048/4,096 bits of Serial Electrically Erasable

Programmable Read-Only Memory (EEPROM) organized as 128/256 words of 16 bits

each (when the ORG pin is connected to V_CC) and 256/512 words of 8 bits each (when

the ORG pin is tied to ground). The device is optimized for use in many industrial and

commercial applications where low-power and low-voltage operations are essential.

The AT93C56B/66B is available in space-saving 8-lead JEDEC SOIC, 8-lead TSSOP,

8-pad UDFN, 8-pad XDFN, and 8-ball VFBGA packages.

The AT93C56B/66B is enabled through the Chip Select pin (CS) and accessed via a

3-wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift Clock

(SK). Upon receiving a Read instruction at DI, the address is decoded, and the data is

clocked out serially on the DO pin. The write cycle is completely self-timed, and no

separate erase cycle is required before Write. The write cycle is only enabled when

the part is in the Erase/Write Enable state. When CS is brought high following the

initiation of a write cycle, the DO pin outputs the Ready/Busy status of the part.

The AT93C56B/66B operates from 1.7V to 5.5V.

Atmel-8735B-SEEPROM-AT93C56B-66B-Datasheet_042013

12 3 4 5 6 7...21

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