Datasheet > AT49LD3200B-10TC

AT49LD3200B-10TC

更新时间： 2025-09-22 19:20:07

品牌	Logo	应用领域
美国微芯 - MICROCHIP		时钟存储
页数	文件大小	规格书
39页	453K
描述
存储容量(Mb):32Mb（1M x 32，2M x 16）;内存数据长度(bit):1M ;字编码数(k):1M ;最大时钟频率(MHz):100 MHz;元器件封装:86-TSOP II;

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中文翻译

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数据手册

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AT49LD3200B-10TC 数据手册

Features

• 3.0V to 3.6V Read/Write

• Burst Read Performance

– <100 MHz (RAS Latency = 2, CAS Latency = 6), 10 ns Cycle Time

t_SAC= 7 ns

– <75 MHz (RAS Latency = 2, CAS Latency = 5), 13 ns Cycle Time

t_SAC= 8 ns

– <50 MHz (RAS Latency = 1, CAS Latency = 4), 20 ns Cycle Time

_SAC= 9 ns

• MRS Cycle with Address Key Programs

– RAS Latency (1 and 2)

– CAS Latency (2 ~ 8)

– Burst Length: 4, 8

– Burst Type: Sequential and Interleaved

• Word Selectable Organization

32-megabit

(1M x 32 or

2M x 16)

– 16 (Word Mode)/x 32 (Double Word Mode)

• Sector Erase Architecture

High-speed

Synchronous

Flash Memory

– Eight 256K Word or 128K Double Word (4-Mbit) Sectors

• Independent Asynchronous Boot Block

– 8K x 16 Bits with Hardware Lockout

• Fast Program Time

– 3-volt, 100 µs per Word/Double Word Typical

– 12-volt, 30 µs per Word/Double Word Typical

• Fast Sector Erase Time

– 2.5 Seconds at 3 Volts

– 1.6 Seconds at 12 Volts

• Low-power Operation

– I_CCRead = 75 mA Typical

• Input and Output Pin Continuity Test Mode Optimizes Off-board Programming

• Package:

– 86-pin TSOP Type II with Off-center Parting Line (OCPL) for Improved Reliability

• LVTTL-compatible Inputs and Outputs

AT49LD3200

AT49LD3200B

SFlash^™

Description

The AT49LD3200 or AT49LD3200B SFlash^™is a synchronous, high-bandwidth Flash

memory fabricated with Atmel’s high-performance CMOS process technology and is

organized either as 2,097,152 x 16 bits (word mode) or as 1,048,576 x 32 bits (double

word mode), depending on the polarity of the WORD pin (see Pin Function Descrip-

tion Table). Synchronous design allows precise cycle control. I/O transactions are

possible on every clock cycle. All operations are synchronized to the rising edge of the

system clock. The range of operating frequencies, programmable burst length and

programmable latencies allow the same device to be useful for a variety of high-band-

width, high-performance memory system applications.

The AT49LD3200B will automatically activate the Asynchronous Boot Block after

power-up, whereas with the AT49LD3200, the Asynchronous Boot Block can be acti-

vated through Mode Register Set.

The synchronous DRAM interface allows designers to maximize system performance

while eliminating the need to shadow slow asynchronous Flash memory into high-

speed RAM.

The 32-megabit SFlash device is designed to sit on the synchronous memory bus and

operate alongside SDRAM.

Rev. 1940B–FLASH–11/01

12 3 4 5 6 7...39

中文翻译

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与AT49LD3200B-10TC相关器件

型号	品牌	获取价格	描述	数据表
AT49LD3200B-10TI	MICROCHIP	获取价格	存储容量(Mb):32Mb（1M x 32，2M x 16）;内存数据长度(bit):1M
AT49LD3200B-13	ATMEL	获取价格	32-megabit (1M x 32 or 2M x 16) High-speed Synchronous Flash Memory
AT49LD3200B-13TI	MICROCHIP	获取价格	存储容量(Mb):32Mb（1M x 32，2M x 16）;内存数据长度(bit):1M
AT49LD3200B-20	ATMEL	获取价格	32-megabit (1M x 32 or 2M x 16) High-speed Synchronous Flash Memory
AT49LD3200B-20TC	MICROCHIP	获取价格	存储容量(Mb):32Mb（1M x 32，2M x 16）;内存数据长度(bit):1M
AT49LD3200B-20TI	MICROCHIP	获取价格	存储容量(Mb):32Mb（1M x 32，2M x 16）;内存数据长度(bit):1M
AT49LH002	ATMEL	获取价格	2-megabit Firmware Hub and Low-Pin Count Flash Memory
AT49LH002-33JC	ATMEL	获取价格	2-megabit Firmware Hub and Low-Pin Count Flash Memory
AT49LH002-33JC	MICROCHIP	获取价格	存储容量(Mb):2Mb（256K x 8）;内存数据长度(bit):256K ;字编码数
AT49LH002-33JC-T	MICROCHIP	获取价格	存储容量(Mb):2Mb（256K x 8）;内存数据长度(bit):256K ;字编码数

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