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AT49BV001T-12JI PDF预览

AT49BV001T-12JI

更新时间: 2024-11-27 20:17:51
品牌 Logo 应用领域
爱特美尔 - ATMEL ATM异步传输模式内存集成电路
页数 文件大小 规格书
25页 387K
描述
Flash, 128KX8, 120ns, PQCC32, PLASTIC, MS-016AE, LCC-32

AT49BV001T-12JI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFJ
包装说明:PLASTIC, MS-016AE, LCC-32针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.91
Is Samacsys:N最长访问时间:120 ns
启动块:TOP命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PQCC-J32
JESD-609代码:e0长度:13.97 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:2
功能数量:1部门数/规模:1,2,1,1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:3.556 mm
部门规模:16K,8K,32K,64K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:11.43 mm
Base Number Matches:1

AT49BV001T-12JI 数据手册

 浏览型号AT49BV001T-12JI的Datasheet PDF文件第2页浏览型号AT49BV001T-12JI的Datasheet PDF文件第3页浏览型号AT49BV001T-12JI的Datasheet PDF文件第4页浏览型号AT49BV001T-12JI的Datasheet PDF文件第5页浏览型号AT49BV001T-12JI的Datasheet PDF文件第6页浏览型号AT49BV001T-12JI的Datasheet PDF文件第7页 
Features  
Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV)  
Fast Read Access Time – 70 ns  
Internal Program Control and Timer  
Sector Architecture  
– One 16-Kbyte Boot Block with Programming Lockout  
– Two 8-Kbyte Parameter Blocks  
– Two Main Memory Blocks (32K, 64K Bytes)  
Fast Erase Cycle Time – 10 Seconds  
Byte-by-byte Programming – 30 µs/Byte Typical  
Hardware Data Protection  
DATA Polling for End of Program Detection  
Low Power Dissipation  
1-megabit  
(128K x 8)  
– 25 mA Active Current  
– 50 µA CMOS Standby Current  
Single 2.7-volt  
Battery-Voltage™  
Flash Memory  
Typical 10,000 Write Cycles  
Description  
The AT49BV/LV001(N)(T) is a 3-volt-only in-system reprogrammable Flash memory.  
Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with  
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to  
70 ns with power dissipation of just 90 mW over the commercial temperature range.  
When the device is deselected, the CMOS standby current is less than 50 µA. For the  
AT49BV001  
AT49LV001  
DIP Top View  
Pin Configurations  
AT49BV001N  
AT49LV001N  
AT49BV001T  
AT49LV001T  
AT49BV001NT  
AT49LV001NT  
Not Recommended  
Pin Name  
A0 - A16  
CE  
Function  
*RESET  
A16  
A15  
A12  
A7  
1
2
3
4
5
6
7
8
9
32 VCC  
31 WE  
30 NC  
Addresses  
29  
A14  
28 A13  
27 A8  
Chip Enable  
Output Enable  
Write Enable  
RESET  
A6  
A5  
26 A9  
OE  
A4  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O7  
20 I/O6  
19 I/O5  
18 I/O4  
17 I/O3  
A3  
WE  
A2 10  
A1 11  
A0 12  
RESET  
I/O0 - I/O7  
DC  
I/O0 13  
I/O1 14  
I/O2 15  
GND 16  
Data Inputs/Outputs  
Don’t Connect  
No Connect  
NC  
VSOP Top View (8 x 14mm) or  
for New Design  
Contact Atmel to discuss  
the latest design in trends  
and options  
TSOP Top View (8 x 20mm) – Type 1  
PLCC Top View  
A11  
A9  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE  
2
A10  
CE  
A8  
3
A13  
A14  
NC  
4
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
5
A7  
A6  
A5  
A4  
A3  
5
6
7
8
9
29 A14  
28 A13  
27 A8  
26 A9  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O7  
6
WE  
7
VCC  
*RESET  
A16  
A15  
A12  
A7  
8
9
10  
11  
12  
13  
14  
15  
16  
A2 10  
A1 11  
A0 12  
I/O0 13  
A6  
A1  
A5  
A2  
A4  
A3  
1110C–FLASH–9/03  
Note:  
*This pin is a DC on the AT49BV001N(T) and AT49LV001N(T).  

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