Datasheet > AT45DB641E-CCUN-T

AT45DB641E-CCUN-T

更新时间： 2024-02-28 18:55:47

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
72页	2403K
描述
64-Mbit DataFlash (with Extra 2-Mbits), 1.7V Minimum SPI Serial Flash Memory

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中文翻译

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数据手册

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AT45DB641E

64-Mbit DataFlash (with Extra 2-Mbits), 1.7V Minimum

SPI Serial Flash Memory

Features



Single 1.7V - 3.6V supply

Serial Peripheral Interface (SPI) compatible

 Supports SPI modes 0 and 3

 Supports RapidS^™operation



Continuous read capability through entire array

 Up to 85MHz

 Low-power read option up to 15MHz

 Clock-to-output time (t_V) of 8ns maximum

User configurable page size

 256 bytes per page

 264 bytes per page (default)

 Page size can be factory pre-configured for 256 bytes



Two fully independent SRAM data buffers (256/264 bytes)

 Allows receiving data while reprogramming the main memory array

Flexible programming options

 Byte/Page Program (1 to 256/264 bytes) directly into main memory

 Buffer Write | Buffer to Main Memory Page Program



Flexible erase options

 Page Erase (256/264 bytes)

 Block Erase (2KB)

 Sector Erase (256KB)

 Chip Erase (64-Mbits)



Program and Erase Suspend/Resume

Advanced hardware and software data protection features

 Individual sector protection

 Individual sector lockdown to make any sector permanently read-only



128-byte, One-Time Programmable (OTP) Security Register

 64 bytes factory programmed with a unique identifier

 64 bytes user programmable



Hardware and software controlled reset options

JEDEC Standard Manufacturer and Device ID Read

Low-power dissipation

 400nA Ultra-Deep Power-Down current (typical)

 5µA Deep Power-Down current (typical)

 25µA Standby current (typical)

 11mA Active Read current (typical at 20MHz)



Endurance: 100,000 program/erase cycles per page minimum

Data retention: 20 years

Complies with full industrial temperature range

Green (Pb/Halide-free/RoHS compliant) packaging options

 8-lead SOIC (0.208" wide)

 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)

 8-pad Very-thin DFN (6 x 8 x 1.0mm)

 9-ball BGA (6mm x 6mm package 3 x 3 ball array)

DS-45DB641E-027E–DFLASH–1/2014

AT45DB641E

12 3 4 5 6 7...72

中文翻译

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与AT45DB641E-CCUN-T相关器件

型号	品牌	获取价格	描述	数据表
AT45DB641E-DWF	DIALOG	获取价格	64-Mbit DataFlash (with Extra 2-Mbits), 1.7V Minimum SPI Serial Flash Memory
AT45DB641E-MHN2B-T	DIALOG	获取价格	64-Mbit DataFlash (with Extra 2-Mbits), 1.7V Minimum SPI Serial Flash Memory
AT45DB641E-MHN-T	DIALOG	获取价格	64-Mbit DataFlash (with Extra 2-Mbits), 1.7V Minimum SPI Serial Flash Memory
AT45DB641E-MHN-Y	DIALOG	获取价格	64-Mbit DataFlash (with Extra 2-Mbits), 1.7V Minimum SPI Serial Flash Memory
AT45DB641E-MWHN2B-T	DIALOG	获取价格	64-Mbit DataFlash (with Extra 2-Mbits), 1.7V Minimum SPI Serial Flash Memory
AT45DB641E-MWHN-T	DIALOG	获取价格	64-Mbit DataFlash (with Extra 2-Mbits), 1.7V Minimum SPI Serial Flash Memory
AT45DB641E-MWHN-Y	DIALOG	获取价格	64-Mbit DataFlash (with Extra 2-Mbits), 1.7V Minimum SPI Serial Flash Memory
AT45DB641E-SHN2B-T	DIALOG	获取价格	64-Mbit DataFlash (with Extra 2-Mbits), 1.7V Minimum SPI Serial Flash Memory
AT45DB641E-SHN-B	DIALOG	获取价格	64-Mbit DataFlash (with Extra 2-Mbits), 1.7V Minimum SPI Serial Flash Memory
AT45DB641E-SHN-T	DIALOG	获取价格	64-Mbit DataFlash (with Extra 2-Mbits), 1.7V Minimum SPI Serial Flash Memory

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