Datasheet > AT28C64-20JJ

AT28C64-20JJ

更新时间： 2024-11-25 03:16:59

品牌	Logo	应用领域
爱特美尔 - ATMEL		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
12页	624K
描述
EEPROM, 8KX8, 200ns, Parallel, CMOS, PQCC32, PLASTIC, MS-016AE, LCC-32

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数据手册

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AT28C64-20JJ 数据手册

Features

• Fast Read Access Time – 120 ns

• Fast Byte Write – 200 µs or 1 ms

• Self-timed Byte Write Cycle

– Internal Address and Data Latches

– Internal Control Timer

– Automatic Clear Before Write

• Direct Microprocessor Control

– READY/BUSY Open Drain Output

– DATA Polling

• Low Power

64K (8K x 8)

Parallel

EEPROMs

– 30 mA Active Current

– 100 µA CMOS Standby Current

• High Reliability

– Endurance: 10⁴or 10⁵Cycles

– Data Retention: 10 Years

• 5V 10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-wide Pinout

• Commercial and Industrial Temperature Ranges

AT28C64

AT28C64X

Description

The AT28C64 is a low-power, high-performance 8,192 words by 8-bit nonvolatile elec-

trically erasable and programmable read only memory with popular, easy-to-use fea-

tures. The device is manufactured with Atmel’s reliable nonvolatile technology.

(continued)

Pin Configurations

PDIP, SOIC

Top View

Pin Name

A0 - A12

Function

RDY/BUSY (or NC)

VCC

Addresses

A12

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

Ready/Busy Output

No Connect

A11

A10

I/O7

I/O6

I/O5

I/O4

I/O3

I/O0 - I/O7

RDY/BUSY

I/O0

I/O1

I/O2

GND

LCC, PLCC

Top View

Don’t Connect

TSOP

Top View

A10

A11

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

29 A8

28 A9

27 A11

26 NC

25 OE

24 A10

23 CE

22 I/O7

21 I/O6

VCC

RDY/BUSY (or NC)

A1 10

A0 11

A12

NC 12

I/O0 13

Rev. 0001H–12/99

Note: PLCC package pins 1 and 17 are

DON’T CONNECT.

12 3 4 5 6 7...12

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