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AT28C256E-20DM/883-815 PDF预览

AT28C256E-20DM/883-815

更新时间： 2024-11-21 03:27:47
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
25页 659K
描述
200NS CERDIP 883C; LEV B COMPLIANT

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中文翻译

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AT28C256E-20DM/883-815 技术参数

生命周期：Active包装说明：DIP,
Reach Compliance Code：compliantFactory Lead Time：18 weeks
风险等级：2.14最长访问时间：200 ns
其他特性：AUTOMATIC WRITEJESD-30 代码：R-GDIP-T28
长度：37.215 mm内存密度：262144 bit
内存集成电路类型：EEPROM内存宽度：8
功能数量：1端子数量：28
字数：32768 words字数代码：32000
工作模式：ASYNCHRONOUS最高工作温度：125 °C
最低工作温度：-55 °C组织：32KX8
封装主体材料：CERAMIC, GLASS-SEALED封装代码：DIP
封装形状：RECTANGULAR封装形式：IN-LINE
并行/串行：PARALLEL编程电压：5 V
筛选级别：MIL-STD-883 Class C座面最大高度：5.72 mm
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：MILITARY
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL宽度：15.24 mm
最长写入周期时间 (tWC)：10 msBase Number Matches：1

AT28C256E-20DM/883-815 数据手册

 浏览型号AT28C256E-20DM/883-815的Datasheet PDF文件第2页浏览型号AT28C256E-20DM/883-815的Datasheet PDF文件第3页浏览型号AT28C256E-20DM/883-815的Datasheet PDF文件第4页浏览型号AT28C256E-20DM/883-815的Datasheet PDF文件第5页浏览型号AT28C256E-20DM/883-815的Datasheet PDF文件第6页浏览型号AT28C256E-20DM/883-815的Datasheet PDF文件第7页 
Features  
• Fast Read Access Time – 150 ns  
• Automatic Page Write Operation  
– Internal Address and Data Latches for 64 Bytes  
– Internal Control Timer  
• Fast Write Cycle Times  
– Page Write Cycle Time: 3 ms or 10 ms Maximum  
– 1 to 64-byte Page Write Operation  
• Low Power Dissipation  
256K (32K x 8)  
Paged Parallel  
EEPROM  
– 50 mA Active Current  
– 200 µA CMOS Standby Current  
• Hardware and Software Data Protection  
• DATA Polling for End of Write Detection  
• High Reliability CMOS Technology  
– Endurance: 104 or 105 Cycles  
– Data Retention: 10 Years  
AT28C256  
• Single 5V ± 10% Supply  
• CMOS and TTL Compatible Inputs and Outputs  
• JEDEC Approved Byte-wide Pinout  
• Full Military and Industrial Temperature Ranges  
• Green (Pb/Halide-free) Packaging Option  
1. Description  
The AT28C256 is a high-performance electrically erasable and programmable read-  
only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-  
tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access  
times to 150 ns with power dissipation of just 440 mW. When the device is deselected,  
the CMOS standby current is less than 200 µA.  
The AT28C256 is accessed like a Static RAM for the read or write cycle without the  
need for external components. The device contains a 64-byte page register to allow  
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to  
64 bytes of data are internally latched, freeing the address and data bus for other  
operations. Following the initiation of a write cycle, the device will automatically write  
the latched data using an internal control timer. The end of a write cycle can be  
detected by DATA Polling of I/O7. Once the end of a write cycle has been detected a  
new access for a read or write can begin.  
Atmel’s AT28C256 has additional features to ensure high quality and manufacturabil-  
ity. The device utilizes internal error correction for extended endurance and improved  
data retention characteristics. An optional software data protection mechanism is  
available to guard against inadvertent writes. The device also includes an extra  
64 bytes of EEPROM for device identification or tracking.  
0006M–PEEPR–12/09  
1234567...25

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AT28C256E-20JIT/R ATMEL

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 		EEPROM, 32KX8, 200ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32

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