AT28C010 Mil
Features
Fast Read Access Time - 120 ns
Automatic Page Write Operation
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Internal Address and Data Latches for 128-Bytes
Internal Control Timer
Fast Write Cycle Time
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Page Write Cycle Time - 10 ms Maximum
1 to 128-Byte Page Write Operation
Low Power Dissipation
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80 mA Active Current
1 Megabit
(128K x 8)
Paged
300 µA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
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•
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High Reliability CMOS Technology
Endurance: 104 or 105 Cycles
Data Retention: 10 Years
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
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CMOS
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E2PROM
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Description
The AT28C010 is a high-performance Electrically Erasable and Programmable Read
Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
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Military
Pin Configurations
44 LCC
Pin Name
A0 - A16
CE
Function
Top View
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
OE
AT28C010 Mil
WE
I/O0 - I/O7
NC
CERDIP, FLATPACK
Top View
PGA
Top View
32 LCC
Top View
0353C
2-243