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AT25F1024C1-10CC-2.7 PDF预览

AT25F1024C1-10CC-2.7

更新时间: 2024-02-14 09:48:40
品牌 Logo 应用领域
其他 - ETC 内存集成电路异步传输模式ATM可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
17页 232K
描述
SPI Serial EEPROM

AT25F1024C1-10CC-2.7 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:TSON, SOLCC8,.3
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.85最大时钟频率 (fCLK):20 MHz
耐久性:10000 Write/Erase CyclesJESD-30 代码:R-CDSO-N8
JESD-609代码:e0长度:8 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:8字数:131072 words
字数代码:128000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:TSON封装等效代码:SOLCC8,.3
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:SERIAL电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:1.14 mm串行总线类型:SPI
最大待机电流:0.00001 A子类别:EEPROMs
最大压摆率:0.03 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子节距:1.27 mm
端子位置:DUAL类型:NOR TYPE
宽度:5 mm最长写入周期时间 (tWC):10 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

AT25F1024C1-10CC-2.7 数据手册

 浏览型号AT25F1024C1-10CC-2.7的Datasheet PDF文件第1页浏览型号AT25F1024C1-10CC-2.7的Datasheet PDF文件第2页浏览型号AT25F1024C1-10CC-2.7的Datasheet PDF文件第3页浏览型号AT25F1024C1-10CC-2.7的Datasheet PDF文件第5页浏览型号AT25F1024C1-10CC-2.7的Datasheet PDF文件第6页浏览型号AT25F1024C1-10CC-2.7的Datasheet PDF文件第7页 
AC Characteristics (Preliminary – Subject to Change)  
Applicable over recommended operating range from TA = -40°C to +85°C, VCC = +2.7V to +3.6V  
CL = 1 TTL Gate and 30 pF (unless otherwise noted).  
Symbol  
Parameter  
Min  
Typ  
Max  
20  
Units  
fSCK  
SCK Clock Frequency  
Input Rise Time  
0
MHz  
tRI  
20  
ns  
tFI  
Input Fall Time  
20  
ns  
tWH  
SCK High Time  
20  
20  
25  
25  
25  
5
ns  
tWL  
SCK Low Time  
ns  
tCS  
CS High Time  
ns  
tCSS  
CS Setup Time  
ns  
tCSH  
CS Hold Time  
ns  
tSU  
Data In Setup Time  
Data In Hold Time  
Hold Setup Time  
Hold Time  
ns  
tH  
5
ns  
tHD  
15  
15  
ns  
tCD  
ns  
tV  
Output Valid  
20  
ns  
tHO  
Output Hold Time  
Hold to Output Low Z  
Hold to Output High Z  
Output Disable Time  
Erase Cycle Time per Sector  
Byte Program Cycle Time(1)  
0
ns  
tLZ  
200  
200  
100  
1.1  
ns  
tHZ  
ns  
tDIS  
ns  
tEC  
s
tBPC  
60  
100  
µs  
Endurance(2)  
10K  
Write Cycles(3)  
Notes: 1. The programming time for n bytes will be equal to n x tBPC  
.
2. This parameter is characterized at 3.0V, 25°C and is not 100% tested.  
3. One write cycle consists of erasing a sector, followed by programming the same sector.  
4
AT25F1024  
1440D02/01  

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