Datasheet > AT24C512C-MA11DXX-B

AT24C512C-MA11DXX-B

更新时间： 2024-11-24 02:44:35

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
43页	1558K
描述
IÂ²C-Compatible (Two-Wire) Serial EEPROM 512âKbit (65,536 x 8)

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AT24C512C-MA11DXX-B 数据手册

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AT24C512C

I²C-Compatible (Two-Wire)

Serial EEPROM 512‑Kbit (65,536 x 8)

Features

•

Low-Voltage and Standard-Voltage Operation:

– V_CC= 1.7V to 3.6V

– V_CC= 2.5V to 5.5V

•

Internally Organized as 65,536 x 8 (512K)

Industrial Temperature Range: -40°C to +85°C

I²C-Compatible (Two-Wire) Serial Interface:

– 100 kHz Standard mode, 1.7V to 5.5V

– 400 kHz Fast mode, 1.7V to 5.5V

– 1 MHz Fast Mode Plus (FM+), 2.5V to 5.5V

Schmitt Triggers, Filtered Inputs for Noise Suppression

Bidirectional Data Transfer Protocol

•

Write-Protect Pin for Full Array Hardware Data Protection

Ultra Low Active Current (3 mA maximum) and Standby Current (6 μA maximum)

128-Byte Page Write Mode:

– Partial page writes allowed

•

Random and Sequential Read Modes

Self-Timed Write Cycle within 5 ms Maximum

ESD Protection > 4,000V

High Reliability:

– Endurance: 1,000,000 write cycles

– Data retention: 100 years

•

Green Package Options (Lead-free/Halide-free/RoHS compliant)

Die Sale Options: Wafer Form and Tape and Reel Available

Packages

•

8-Lead SOIC, 8-Lead SOIJ, 8-Lead TSSOP, 8-Pad UDFN, 8-Ball WLCSP and 8-Ball VFBGA

DS20006161C-page 1

Datasheet

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