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AT002S3-12 PDF预览

AT002S3-12

更新时间: 2024-01-25 16:12:40
品牌 Logo 应用领域
其他 - ETC 衰减器
页数 文件大小 规格书
2页 47K
描述
Analog Attenuator

AT002S3-12 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SOIC-8Reach Compliance Code:unknown
风险等级:5.89标称衰减:27 dB
特性阻抗:50 Ω构造:COMPONENT
最大输入功率 (CW):6.99 dBm最大插入损耗:2.9 dB
JESD-609代码:e0安装特点:SURFACE MOUNT
端子数量:8最大工作频率:2500 MHz
最小工作频率:400 MHz最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:SOP8,.25电源:5 V
射频/微波设备类型:VARIABLE ATTENUATOR子类别:RF/Microwave Attenuators
表面贴装:YES技术:GAAS
端子面层:Tin/Lead (Sn/Pb)最大电压驻波比:2.5
Base Number Matches:1

AT002S3-12 数据手册

 浏览型号AT002S3-12的Datasheet PDF文件第2页 
GaAs 35 dB MMIC FET Voltage Variable Single  
Positive Control Attenuator 0.4–2.5 GHz  
AT002S3–12  
Features  
35 dB Range  
SOIC 8 Package  
Single Positive DC Bias Control  
Low Insertion Loss (< 1.7 dB @ 900 MHz)  
J1  
J2  
Low Cost  
Requires Single Fixed Positive 5 Volt Bias  
Description  
The AT002S3–12 GaAs FET MMIC bridge “T”  
attenuator provides 35 dB minimum absolute  
attenuation at 900 MHz.  
The key feature of this attenuator is the requirement  
of only one “positive” control voltage. On the RF  
terminals, blocking capacitors greater than 0.001 µf  
Operating Characteristics at 25°C  
are necessary.  
Impedance  
50 Ohms Nominal  
Switching Characteristics  
RISE, FALL (10/90% or 90/10% RF)  
ON, OFF (50% CTL to 90/10% RF)  
Video Feedthru  
1.0  
1.5  
20  
µs  
µs  
Typ  
Typ  
mV Typ  
Electrical Specifications at 25°C  
Attenuation Flatness  
0.8–2.0 GHz  
0–10 dB  
11–20 dB  
21–30 dB  
31–Max  
+ 1.0 dB  
+ 1.5 dB  
+ 3.5 dB  
+ 4.5 dB  
Typ  
Typ  
Typ  
Typ  
Insertion Loss  
0.4 – 1.0 GHz  
1.0 – 2.0 GHz  
2.0 – 2.5 GHz  
1.7  
2.4  
2.9  
dB  
dB  
dB  
Max  
Max  
Max  
Absolute  
Attenuation  
0.4–0.6  
0.6–1.0  
1.0–1.5  
1.5–2.0  
2.0–2.5  
30  
35  
30  
27  
25  
dB  
dB  
dB  
dB  
dB  
Min  
Min  
Min  
Min  
Min  
Compression Point (900 MHz) Worst Case for all  
Attenuation States  
(V =0V,  
1
0.1 dB  
1.0 dB  
–10  
–3  
dBm Typ  
dBm Typ  
V
DD  
=5V)  
Control Voltages  
V1 (Low)  
1,2  
VSWR (I/O)  
0.4 – 2.5 GHz  
2.5:1  
Max  
0 to 0.2V @ 35 µA Max  
V1 (High)  
+5V @ 30 µA Max  
1.  
2.  
For Insertion Loss and Absolute Attenuation States.  
Better VSWR may be obtained by raising the +5V bias to +6V. Set control V1 to  
operate from 0 to 6V.  
Bias Voltage, V  
+5V @ 50 µA Max  
DD  
ALPHA INDUSTRIES, INC. 20 SYLVAN ROAD, WOBURN, MA 01801  
TEL: (617) 935–5150 FAX: (617) 824–4579  
1–82  
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