Datasheet > AS8E128K32N-120/883C

AS8E128K32N-120/883C

更新时间： 2022-12-18 03:59:43

品牌	Logo	应用领域
AUSTIN		存储可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
13页	283K
描述
128K x 32 EEPROM EEPROM Memory Array

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EEPROM

AS8E128K32

Austin Semiconductor, Inc.

ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS

(-55^oC < T_A< +125^oC or -40^oC to +85^oC; Vcc = 5V +10%)

120

140

150

200

250

300

MAX UNITS

DESCRIPTION

Address to Output Delay

SYMBOL MIN MAX MIN MAX

MIN

MAX

MIN

MAX

MIN

MAX

MIN

120

140

150

200

250

300

t_ACC

t_CE

t_OE

t_DF

150

200

250

300

CE\ to Output Delay

OE\ to Output Delay

CE\ or OE\ to Output Float

Output Hold from OE\, CE\ or Address,

whichever comes first

t_OH

AC READ WAVEFORMS^(1,2,3)

tRC

ADDRESS VALID

ADDRESS

CE/

_tt_DF

tCE

t_O

tOH

OE\

tACC

ACC

OUTPUT VALID

NOTES:

1. CE\ may be delayed to t_ACC-t_CEafter the address transition without impact on t_ACC

2. OE\ may be delayed to t_CE-t_OEafter the falling edge of CE\ without impact on t_CEor by t_ACC-t_OEafter an address change

without inpact on t_ACC

3. t_DFis specified from OE\ or CE\ whichever occurs first (C_L= 5pF).

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS8E128K32

Rev. 7.6 06/05

1 2 3 456 7 8...13

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