Datasheet > AS8E128K32N-120/883C

AS8E128K32N-120/883C

更新时间： 2022-12-18 03:59:43

品牌	Logo	应用领域
AUSTIN		存储可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
13页	283K
描述
128K x 32 EEPROM EEPROM Memory Array

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EEPROM

AS8E128K32

Austin Semiconductor, Inc.

ABSOLUTE MAXIMUM RATINGS*

Voltage on Vcc Supply Relative to Vss

*Stresses greater than those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. This is

Vcc ..............................................................................-.5V to +7.0V a stress rating only and functional operation of the device at

Storage Temperature ....................... ....................-65°C to +150°C these or any other conditions above those indicated in the

Voltage on any Pin Relative to Vss.....................-.5V to Vcc+1 V operation section of this specification is not implied. Exposure

Max Junction Temperature**.............................................+150°C to absolute maximum rating conditions for extended periods

may affect reliability.

Thermal Resistance junction to case (θ_JC):

**Junction temperature depends upon package type, cycle time,

loading, ambient temperature and airflow, and humidity (plas-

tics).

Package Type Q...............................................11.3° C/W

Package Type P& PN.......................................2.8° C/W

ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS

(-55^oC<T_A<125^oC or -40^oC to +85^oC;Vcc = 5V + 10%)

µΑ

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS8E128K32

Rev. 7.6 06/05

1 234 5 6 7...13

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